High current density bridge rectifier VISHAY PB4010-E3/45 designed for home appliances and white goods

Key Attributes
Model Number: PB4010-E3/45
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
400A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
1.1V@20A
Current - Rectified:
40A
Voltage - DC Reverse(Vr):
1kV
Mfr. Part #:
PB4010-E3/45
Package:
SIP-4
Product Description

Vishay isoCink+ Enhanced Bridge Rectifiers (PB4006, PB4008, PB4010)

The Vishay isoCink+ series offers enhanced high-current density bridge rectifiers in a single in-line package. These devices provide superior thermal conductivity and are designed for general-purpose AC/DC full-wave rectification in switching power supplies, home appliances, and white-goods applications. They are tested to UL 1557 standard for safety, electrically isolated semiconductor devices, with dielectric testing up to 1500V and epoxy meeting UL 94 V-0 flammability rating.

Product Attributes

  • Brand: Vishay General Semiconductor
  • Product Line: isoCink+
  • Certifications: UL recognition file number E312394 (QQQX2) UL 1557
  • Material Compliance: RoHS-compliant (E3 suffix)
  • Flammability Rating: UL 94 V-0
  • Lead Finish: Matte tin plated, solderable per J-STD-002 and JESD 22-B102
  • Whisker Test: E3 suffix meets JESD 201 class 1A

Technical Specifications

Parameter Symbol PB4006 PB4008 PB4010 Unit
Primary Characteristics
Average Forward Current IF(AV) 40 40 40 A
Peak Reverse Voltage VRRM 600 800 1000 V
Peak Forward Surge Current IFSM 400 400 400 A
Reverse Current IR 10 10 10 µA
Forward Voltage at IF = 20 A VF 0.94 0.94 0.94 V
Max. Junction Temperature TJ max. 150 150 150 °C
Maximum Ratings (TA = 25 °C unless otherwise noted)
Maximum Repetitive Peak Reverse Voltage VRRM 600 800 1000 V
Average Rectified Forward Current (TC = 87 °C) (1) IO 40 40 40 A
Average Rectified Forward Current (TA = 25 °C) (2) IO 4.4 4.4 4.4 A
Non-Repetitive Peak Forward Surge Current (8.3 ms single sine-wave, TJ = 25 °C) IFSM 400 400 400 A
Rating for fusing (t < 8.3 ms) (TJ = 25 °C) I²t 664 664 664 A²s
Operating Junction and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics (TA = 25 °C unless otherwise noted)
Maximum Instantaneous Forward Voltage per diode (IF = 20 A) (1) VF 1.01 / 1.10 (25°C)
0.94 / 1.00 (125°C)
1.01 / 1.10 (25°C)
0.94 / 1.00 (125°C)
1.01 / 1.10 (25°C)
0.94 / 1.00 (125°C)
V
Reverse Current per diode (rated VR) (2) IR - / 10 (µA @ 25°C)
- / 130 (500 @ 125°C)
- / 10 (µA @ 25°C)
- / 130 (500 @ 125°C)
- / 10 (µA @ 25°C)
- / 130 (500 @ 125°C)
µA / pF
Typical Junction Capacitance per diode (4.0 V, 1 MHz) CJ 120 120 120 pF
Thermal Characteristics (TA = 25 °C unless otherwise noted)
Typical Thermal Resistance (With heatsink) (1) RθJC 0.75 0.75 0.75 °C/W
Typical Thermal Resistance (Without heatsink, free air) (2) RθJA 18 18 18 °C/W

2504101957_VISHAY-PB4010-E3-45_C17472580.pdf

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