High voltage UTC 4N150L-T3F-T MOSFET suitable for bridge circuits and PWM motor control applications
Key Attributes
Model Number:
4N150L-T3F-T
Product Custom Attributes
Drain To Source Voltage:
1.5kV
Current - Continuous Drain(Id):
4A
RDS(on):
6.5Ω@10V,2A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
5V
Reverse Transfer Capacitance (Crss@Vds):
17pF
Number:
1 N-channel
Pd - Power Dissipation:
-
Input Capacitance(Ciss):
1.31nF
Gate Charge(Qg):
40nC@10V
Mfr. Part #:
4N150L-T3F-T
Package:
TO-3PF
Product Description
UNISONIC TECHNOLOGIES CO., LTD 4N150 Power MOSFET
The UTC 4N150 is a high voltage power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching times, low gate charge, low on-state resistance, and high rugged avalanche characteristics. This MOSFET is ideal for use in power supplies, PWM motor controls, high-efficiency AC to DC converters, and bridge circuits.
Product Attributes
- Brand: UNISONIC TECHNOLOGIES CO., LTD
- Product Code: 4N150
- Certifications: Lead Free, Halogen Free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| OFF CHARACTERISTICS | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID=250A, VGS=0V | 1500 | V | ||
| Drain-Source Leakage Current | IDSS | VDS=1500V, VGS=0V | 10 | A | ||
| Gate-Source Leakage Current (Forward) | IGSS | VGS=+30V, VDS=0V | +100 | nA | ||
| Gate-Source Leakage Current (Reverse) | IGSS | VGS=-30V, VDS=0V | -100 | nA | ||
| ON CHARACTERISTICS | ||||||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250A | 3.0 | 5.0 | V | |
| Static Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=2.0A | 6.5 | |||
| DYNAMIC PARAMETERS | ||||||
| Input Capacitance | CISS | VGS=0V, VDS=25V, f=1.0MHz | 1310 | pF | ||
| Output Capacitance | COSS | VGS=0V, VDS=25V, f=1.0MHz | 95 | pF | ||
| Reverse Transfer Capacitance | CRSS | VGS=0V, VDS=25V, f=1.0MHz | 17 | pF | ||
| SWITCHING PARAMETERS | ||||||
| Total Gate Charge | QG | VDS=1200V, VGS=10V, ID=4A, IG=1mA | 40 | nC | ||
| Gate to Source Charge | QGS | VDS=1200V, VGS=10V, ID=4A, IG=1mA | 11 | nC | ||
| Gate to Drain Charge | QGD | VDS=1200V, VGS=10V, ID=4A, IG=1mA | 16 | nC | ||
| Turn-ON Delay Time | tD(ON) | VDS=100V, VGS=10V, ID=4A, RG=25 | 32 | ns | ||
| Rise Time | tR | VDS=100V, VGS=10V, ID=4A, RG=25 | 39 | ns | ||
| Turn-OFF Delay Time | tD(OFF) | VDS=100V, VGS=10V, ID=4A, RG=25 | 125 | ns | ||
| Fall-Time | tF | VDS=100V, VGS=10V, ID=4A, RG=25 | 47 | ns | ||
| SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS | ||||||
| Maximum Body-Diode Continuous Current | IS | 4 | A | |||
| Maximum Body-Diode Pulsed Current | ISM | 8 | A | |||
| Drain-Source Diode Forward Voltage | VSD | IS=4A, VGS=0V | 1.4 | V | ||
| Body Diode Reverse Recovery Time | trr | IS=4A, VGS=0V, dIF/dt=100A/s | 1.2 | s | ||
| Body Diode Reverse Recovery Charge | Qrr | IS=4A, VGS=0V, dIF/dt=100A/s | 13.1 | C | ||
| ABSOLUTE MAXIMUM RATINGS | ||||||
| Drain-Source Voltage | VDSS | TC=25C | 1500 | V | ||
| Gate-Source Voltage | VGSS | TC=25C | 30 | V | ||
| Drain Current Continuous | ID | TC=25C | 4 | A | ||
| Drain Current Pulsed | IDM | TC=25C | 8 | A | ||
| Avalanche Energy Single Pulsed | EAS | TC=25C | 721 | mJ | ||
| Peak Diode Recovery dv/dt | dv/dt | TC=25C | 2 | V/ns | ||
| Power Dissipation (TO-220/TO-263) | PD | TC=25C | 110 | W | ||
| Power Dissipation (TO-220F/TO-220F1/TO-220F2) | PD | TC=25C | 45 | W | ||
| Power Dissipation (TO-247) | PD | TC=25C | 140 | W | ||
| Power Dissipation (TO-3PB) | PD | TC=25C | 150 | W | ||
| Power Dissipation (TO-3PF) | PD | TC=25C | 60 | W | ||
| Junction Temperature | TJ | +150 | C | |||
| Storage Temperature | TSTG | -55 | ~ | +150 | C | |
| THERMAL DATA | ||||||
| Junction to Ambient (TO-220/TO-220F) | JA | 62.5 | /W | |||
| Junction to Ambient (TO-263) | JA | 62.5 | /W | |||
| Junction to Ambient (TO-247) | JA | 50 | /W | |||
| Junction to Ambient (TO-3PB/TO-3PF) | JA | 50 | /W | |||
| Junction to Case (TO-220/TO-263) | JC | 1.14 | /W | |||
| Junction to Case (TO-220F/TO-220F1/TO-220F2) | JC | 2.77 | /W | |||
| Junction to Case (TO-247) | JC | 0.89 | /W | |||
| Junction to Case (TO-3PB) | JC | 0.83 | /W | |||
| Junction to Case (TO-3PF) | JC | 2.08 | /W | |||
2411121117_UTC-4N150L-T3F-T_C5310425.pdf
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