High Power Phase Control Thyristor VISHAY VS-ST650C22L1 Suitable for Controlled DC Power Supplies and AC Controllers
Key Attributes
Model Number:
VS-ST650C22L1
Product Custom Attributes
Holding Current (Ih):
600mA
Current - Gate Trigger(Igt):
-
Voltage - On State(Vtm):
2.07V
Current - On State(It(RMS)):
1.557kA
Peak Off - State Voltage(Vdrm):
2.2kV
SCR Type:
1 SCR
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
-
Mfr. Part #:
VS-ST650C22L1
Package:
TO-200AC
Product Description
Product Overview
The Vishay Semiconductors VS-ST650C..L Series are Phase Control Thyristors (Hockey PUK Version) designed for high-power applications. Featuring a center amplifying gate and a metal case with a ceramic insulator, these thyristors are housed in the international standard B-PUK (TO-200AC) package. They are ideal for DC motor control, controlled DC power supplies, and AC controllers.
Product Attributes
- Brand: Vishay Semiconductors
- Case Style: B-PUK (TO-200AC)
- Material Categorization: Refer to www.vishay.com/doc?99912 for definitions of compliance.
Technical Specifications
| Parameter | Test Conditions | Values | Units |
|---|---|---|---|
| Primary Characteristics | |||
| Average On-State Current (IT(AV)) | 790 | A | |
| Repetitive Peak Off-State Voltage (VDRM/VRRM) | 2000, 2200, 2400 | V | |
| Peak On-State Voltage (VTM) | Ipk = 1700 A, TJ = TJ maximum, tp = 10 ms sine pulse | 2.07 | V |
| Gate Trigger Current (IGT) | TJ = 25 C | 100 | mA |
| Operating Temperature Range (TJ) | -40 to +125 | C | |
| Package | B-PUK (TO-200AC) | ||
| Circuit Configuration | Single SCR | ||
| Major Ratings and Characteristics | |||
| Average On-State Current (IT(AV)) | Ths = 55 C | 790 | A |
| RMS On-State Current (IT(RMS)) | Ths = 25 C | 1557 | A |
| Peak Surge Current (ITSM) | 50 Hz, t = 10 ms | 10100 | A |
| Peak Surge Current (ITSM) | 60 Hz, t = 8.3 ms | 10700 | A |
| It for fusing | 50 Hz, t = 10 ms | 510 | kAs |
| It for fusing | 60 Hz, t = 8.3 ms | 475 | kAs |
| Repetitive Peak Off-State Voltage (VDRM/VRRM) | 2000 to 2400 | V | |
| Turn-off Time (tq) | Typical | 200 | s |
| Junction Temperature (TJ) | -40 to +125 | C | |
| Absolute Maximum Ratings | |||
| Maximum Average On-State Current (IT(AV)) | 180 conduction, half sine wave, Double side (single side) cooled, 55 C (85 C) heatsink temperature | 790 (324) | A |
| Maximum RMS On-State Current (IT(RMS)) | DC at 25 C heatsink temperature, double side cooled | 1857 | A |
| Maximum Peak, One-Cycle Non-Repetitive Surge Current (ITSM) | t = 10 ms, No voltage reapplied, Sinusoidal half wave, initial TJ = TJ maximum | 10100 | A |
| Maximum Peak, One-Cycle Non-Repetitive Surge Current (ITSM) | t = 8.3 ms, 100 % VRRM reapplied | 9150 | A |
| Maximum It for fusing (It) | t = 10 ms, No voltage reapplied | 510 | kAs |
| Maximum It for fusing (It) | t = 8.3 ms, 100 % VRRM reapplied | 347 | kAs |
| Maximum It for fusing (I2t) | t = 0.1 to 10 ms, no voltage reapplied | 5100 | kAs |
| Low Level Value of Threshold Voltage (VT(TO)1) | TJ = TJ maximum | 1.04 | V |
| High Level Value of Threshold Voltage (VT(TO)2) | TJ = TJ maximum | 1.13 | V |
| Low Level Value of On-State Slope Resistance (rt1) | TJ = TJ maximum | 0.61 | m |
| High Level Value of On-State Slope Resistance (rt2) | TJ = TJ maximum | 0.35 | m |
| Maximum Holding Current (IH) | TJ = 25 C, anode supply 12 V resistive load | 600 | mA |
| Typical Latching Current (IL) | 1000 | ||
| Switching Parameter | |||
| Maximum Non-Repetitive Rate of Rise of Turned-On Current (dI/dt) | Gate drive 20 V, 20 , tr 1 s, TJ = TJ maximum, anode voltage 80 % VDRM | 1000 | A/s |
| Typical Delay Time (td) | Gate current 1 A, dIg/dt = 1 A/s, Vd = 0.67 % VDRM, TJ = 25 C | 1.0 | s |
| Maximum Turn-Off Time (tq) | ITM = 750 A, TJ = TJ maximum, dI/dt = 60 A/s, VR = 50, dV/dt = 20 V/s, Gate 0 V, 100 , tp = 500 s | 200 | |
| Blocking Parameter | |||
| Maximum Critical Rate of Rise of Off-State Voltage (dV/dt) | TJ = TJ maximum, linear to 80 % rated VDRM | 500 | V/s |
| Maximum Peak Reverse and Off-State Leakage Current (IRRM, IDRM) | TJ = TJ maximum, rated VDRM/VRRM applied | 80 | mA |
| Triggering Parameter | |||
| Maximum Peak Gate Power (PGM) | TJ = TJ maximum, tp 5 ms | 10.0 | W |
| Maximum Average Gate Power (PG(AV)) | TJ = TJ maximum, f = 50 Hz, d% = 50 | 2.0 | |
| Maximum Peak Positive Gate Current (IGM) | TJ = TJ maximum, tp 5 ms | 3.0 | A |
| Maximum Peak Positive Gate Voltage (+VGM) | 20 | V | |
| Maximum Peak Negative Gate Voltage (-VGM) | 5.0 | V | |
| DC Gate Current Required to Trigger (IGT) | TJ = -40 C, 12 V anode to cathode applied | 200 | mA |
| DC Gate Current Required to Trigger (IGT) | TJ = 25 C | 100 to 200 | mA |
| DC Gate Current Required to Trigger (IGT) | TJ = 125 C | 50 | - |
| DC Gate Voltage Required to Trigger (VGT) | TJ = -40 C | 2.5 | V |
| DC Gate Voltage Required to Trigger (VGT) | TJ = 25 C | 1.8 to 3.0 | V |
| DC Gate Voltage Required to Trigger (VGT) | TJ = 125 C | 1.1 | - |
| DC Gate Current Not to Trigger (IGD) | TJ = TJ maximum | 10 | mA |
| DC Gate Voltage Not to Trigger (VGD) | 0.25 | V | |
| Thermal and Mechanical Specifications | |||
| Maximum Operating Temperature Range (TJ) | -40 to 125 | C | |
| Maximum Storage Temperature Range (TStg) | -40 to 150 | C | |
| Maximum Thermal Resistance, Junction to Heatsink (RthJ-hs) | DC operation single side cooled | 0.073 | K/W |
| Maximum Thermal Resistance, Junction to Heatsink (RthJ-hs) | DC operation double side cooled | 0.031 | K/W |
| Maximum Thermal Resistance, Case to Heatsink (RthC-hs) | DC operation single side cooled | 0.011 | K/W |
| Maximum Thermal Resistance, Case to Heatsink (RthC-hs) | DC operation double side cooled | 0.006 | K/W |
| Mounting Force | 10 % | 14 (1500) | N (kg) |
| Approximate Weight | 255 | g | |
| Ordering Information | |||
| Device Code | VS-ST650C..L | ||
| Voltage Code | (e.g., 20 for 2000V) | 20, 22, 24 | |
| Case | L = PUK case B-PUK (TO-200AC) | ||
| Critical dV/dt | (e.g., none = 500 V/s, L = 1000 V/s) | none, L | |
Note: Refer to the datasheet for detailed figures and additional technical data.
2411272151_VISHAY-VS-ST650C22L1_C17685734.pdf
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