Robust industrial phase control thyristors with metal case ceramic insulator and center amplifying gate VISHAY VS-ST1230C16K1
Key Attributes
Model Number:
VS-ST1230C16K1
Product Custom Attributes
Holding Current (Ih):
600mA
Current - Gate Trigger(Igt):
200mA
Voltage - On State(Vtm):
1.62V
Current - On State(It(RMS)):
3.2kA
Peak Off - State Voltage(Vdrm):
1.6kV
SCR Type:
1 SCR
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
3V
Mfr. Part #:
VS-ST1230C16K1
Package:
TO-200AC
Product Description
Product Overview
The Vishay Semiconductors VS-ST1230C..K Series are high-power Phase Control Thyristors designed in a hockey PUK version. Featuring a center amplifying gate and a metal case with a ceramic insulator, these thyristors are built for industrial-level applications. They are ideal for use in DC motor controls, controlled DC power supplies, and AC controllers, offering robust performance and reliability.
Product Attributes
- Brand: Vishay Semiconductors
- Product Series: VS-ST1230C..K
- Case Style: K-PUK (A-24)
- Gate Type: Center amplifying gate
- Insulation: Metal case with ceramic insulator
- Material Categorization: For definitions of compliance, please see www.vishay.com/doc?99912
Technical Specifications
| Parameter | Test Conditions | Values | Units |
|---|---|---|---|
| Primary Characteristics | |||
| Average On-State Current (IT(AV)) | 1745 | A | |
| Repetitive Peak Off-State Voltage (VDRM/VRRM) | 800, 1200, 1400, 1600 | V | |
| On-State Voltage (VTM) | Ipk = 4000 A, tp = 10 ms sine pulse | 1.62 | V |
| Gate Trigger Current (IGT) | TJ = 25 C | 100 | mA |
| Operating Junction Temperature (TJ) | -40 to +125 | C | |
| Package | K-PUK (A-24) | ||
| Circuit Configuration | Single SCR | ||
| Major Ratings and Characteristics | |||
| Average On-State Current (IT(AV)) | Ths = 55 C | 1745 | A |
| RMS On-State Current (IT(RMS)) | Ths = 25 C | 3200 | A |
| Peak Surge Current (ITSM) | 50 Hz, t = 10 ms | 33500 | A |
| Peak Surge Current (ITSM) | 60 Hz, t = 8.3 ms | 35100 | A |
| I2t | 50 Hz, t = 10 ms | 5615 | kAs |
| I2t | 60 Hz, t = 8.3 ms | 5126 | kAs |
| Repetitive Peak Off-State Voltage (VDRM/VRRM) | 800 to 1600 | V | |
| Typical Turn-off Time (tq) | 200 | s | |
| Voltage Ratings | |||
| Type Number | Voltage Code | VDRM/VRRM, Maximum Repetitive Peak and Off-State Voltage (V) | IDRM/IRRM Maximum at TJ = TJ Maximum (mA) |
| VS-ST1230C..K | 08 | 800 | 100 |
| VS-ST1230C..K | 12 | 1200 | 14 |
| VS-ST1230C..K | 14 | 1400 | 16 |
| VS-ST1230C..K | 16 | 1600 | 16 |
| Absolute Maximum Ratings | |||
| Maximum average on-state current at heatsink temperature | 180 conduction, half sine wave, double side (single side) cooled | 1745 (700) | A (C) |
| Maximum RMS on-state current | DC at 25 C heatsink temperature, double side cooled | 3200 | A |
| Maximum peak, one-cycle non-repetitive surge current | t = 10 ms, No voltage reapplied, Sinusoidal half wave, initial TJ = TJ maximum | 33500 | A |
| Maximum peak, one-cycle non-repetitive surge current | t = 8.3 ms, No voltage reapplied, Sinusoidal half wave, initial TJ = TJ maximum | 35100 | A |
| Maximum I2t for fusing | t = 10 ms, No voltage reapplied | 5615 | kAs |
| Maximum I2t for fusing | t = 8.3 ms, No voltage reapplied | 5126 | kAs |
| Maximum I2t for fusing | t = 0.1 to 10 ms, no voltage reapplied | 56150 | kAs |
| Low level value of threshold voltage | TJ = TJ maximum | 0.93 | V |
| High level value of threshold voltage | TJ = TJ maximum | 1.02 | V |
| Low level value of on-state slope resistance | TJ = TJ maximum | 0.17 | m |
| High level value of on-state slope resistance | TJ = TJ maximum | 0.16 | m |
| Maximum on-state voltage (VTM) | Ipk = 4000 A, TJ = TJ maximum, tp = 10 ms sine pulse | 1.62 | V |
| Maximum holding current (IH) | TJ = 25 C, anode supply 12 V resistive load | 600 | mA |
| Typical latching current (IL) | 1000 | mA | |
| Switching Parameters | |||
| Maximum non-repetitive rate of rise of turned-on current (dI/dt) | Gate drive 20 V, 20 , tr 1 s, TJ = TJ maximum, anode voltage 80 % VDRM | 1000 | A/s |
| Typical delay time (td) | Gate current 1 A, dIg/dt = 1 A/s, Vd = 0.67 % VDRM, TJ = 25 C | 1.9 | s |
| Typical turn-off time (tq) | ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 , tp = 500 s | 200 | s |
| Blocking Parameters | |||
| Maximum critical rate of rise of off-state voltage (dV/dt) | TJ = TJ maximum, linear to 80 % rated VDRM | 500 | V/s |
| Maximum peak reverse and off-state leakage current (IRRM, IDRM) | TJ = TJ maximum, rated VDRM/VRRM applied | 100 | mA |
| Triggering Parameters | |||
| Maximum peak gate power (PGM) | TJ = TJ maximum, tp 5 ms | 16 | W |
| Maximum average gate power (PG(AV)) | TJ = TJ maximum, f = 50 Hz, d% = 50 | 3 | W |
| Maximum peak positive gate current (IGM) | TJ = TJ maximum, tp 5 ms | 3.0 | A |
| Maximum peak positive gate voltage (+VGM) | 20 | V | |
| Maximum peak negative gate voltage (-VGM) | 5.0 | V | |
| DC gate current required to trigger (IGT) | TJ = -40 C | 200 | mA |
| DC gate current required to trigger (IGT) | TJ = 25 C | 100 | mA |
| DC gate current required to trigger (IGT) | TJ = 125 C | 50 | mA |
| DC gate voltage required to trigger (VGT) | TJ = -40 C | 1.4 | V |
| DC gate voltage required to trigger (VGT) | TJ = 25 C | 1.1 | V |
| DC gate voltage required to trigger (VGT) | TJ = 125 C | 0.9 | V |
| Maximum gate current not to trigger (IGD) | TJ = TJ maximum | 10 | mA |
| Maximum gate voltage not to trigger (VGD) | TJ = TJ maximum | 0.25 | V |
| Thermal and Mechanical Specifications | |||
| Maximum operating junction temperature range (TJ) | -40 to 125 | C | |
| Maximum storage temperature range (TStg) | -40 to 150 | C | |
| Maximum thermal resistance, junction to heatsink (RthJ-hs) | DC operation single side cooled | 0.042 | K/W |
| Maximum thermal resistance, junction to heatsink (RthJ-hs) | DC operation double side cooled | 0.021 | K/W |
| Maximum thermal resistance, case to heatsink (RthC-hs) | DC operation single side cooled | 0.006 | K/W |
| Maximum thermal resistance, case to heatsink (RthC-hs) | DC operation double side cooled | 0.003 | K/W |
| Mounting force | 10 % | 500 (2500) | N (kg) |
| Approximate weight | 425 | g | |
Ordering Information
Device code: ST1230C..K
Structure:
- 1: Thyristor
- 2: Essential part number
- 3: 0 = converter grade
- 4: C = ceramic PUK
- 5: Voltage code x 100 = VRRM (see Voltage Ratings table)
- 6: K = PUK case K-PUK (A-24)
- 7: Terminal options for gate and auxiliary cathode: 0 (eyelet, unsoldered), 1 (fast-on, unsoldered), 2 (eyelet, soldered), 3 (fast-on, soldered)
- 8: Critical dV/dt: None = 500 V/s (standard), L = 1000 V/s (special selection)
- 9: 1 - Vishay Semiconductors product
Example: VS-ST1230C16K1-1
Related Documents
- Dimensions: www.vishay.com/doc?95081
2411272147_VISHAY-VS-ST1230C16K1_C17681137.pdf
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