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quality Durable Single NPN Silicon Transistor Wayon WT3904F for Switching Applications in Electronic Devices factory
quality Durable Single NPN Silicon Transistor Wayon WT3904F for Switching Applications in Electronic Devices factory

Durable Single NPN Silicon Transistor Wayon WT3904F for Switching Applications in Electronic Devices

Key Attributes
Model Number: WT3904F
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
DC Current Gain:
300@10mA,1V
Transition Frequency(fT):
300MHz
Number:
1 NPN
Vce Saturation(VCE(sat)):
300mV@50mA,5mA
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
WT3904F
Package:
DFN-3L(1x0.6)
Product Description

Product Overview

The WT3904F is a single NPN silicon transistor designed for general-purpose switching applications. It is complementary to the WT3906F and comes in a compact DFN1006-3L package. This RoHS compliant device offers reliable performance for various electronic circuits.

Product Attributes

  • Brand: WAYON
  • Origin: China
  • Material: Silicon
  • Certifications: RoHS Compliant
  • Marking Code: 1N

Technical Specifications

ParameterSymbolTest ConditionsMin.Typ.Max.Unit
Collector-Base Breakdown VoltageV(BR)CBOIC = 10A, IE = 060--V
Collector-Emitter Breakdown VoltageV(BR)CEOIC = 1mA, IB = 040--V
Emitter-Base Breakdown VoltageV(BR)EBOIE = 10A, IC = 06--V
Collector Cut-off CurrentICBOVCB = 60V, IE = 0--100nA
Collector Cut-off CurrentICEXVCE = 30V, VEB(off) = 3V--50nA
Emitter Cut-off CurrentIEBOVEB = 5V, IC = 0--100nA
DC Current GainhFE(1)VCE = 1V, IC = 10mA100-300-
Collector-Emitter Saturation VoltageVCE(sat)IC = 50mA, IB = 5mA--0.30V
Base-Emitter Saturation VoltageVBE(sat)IC = 50mA, IB = 5mA--0.95V
Transition FrequencyfTVCE= 20V, IC= 10mA, f= 100MHz300--MHz
Delay TimetdVCC = 3V, VBE(off) = 0.5V, IC = 10mA, IB1 = 1mA-30-ns
Rise Timetr-30-ns
Storage TimetsVCC = 3V, IC = 10mA, IB1 = IB2 = 1mA-160-ns
Fall Timetf-40-ns
Collector Power Dissipation (FR4, single-sided copper, tin-plated, standard footprint)PC1--100mW
Collector Power Dissipation (FR4, single-sided copper, tin-plated, mounting pad for collector 1cm)PC2--590mW
Junction TemperatureTj--150C
Storage TemperatureTstg-55-150C
Thermal Resistance (Junction to Ambient, FR4, single-sided copper, tin-plated, standard footprint)RJA1--1250C/W
Thermal Resistance (Junction to Ambient, FR4, single-sided copper, tin-plated, mounting pad for collector 1cm)RJA2--212C/W

2410121313_Wayon-WT3904F_C25170702.pdf

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