High reliability N Channel Trench MOSFET VBsemi Elec BSC019N04NS G VB for power conversion solutions
Key Attributes
Model Number:
BSC019N04NS G-VB
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
120A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
275pF
Number:
1 N-channel
Output Capacitance(Coss):
610pF
Input Capacitance(Ciss):
4.75nF
Pd - Power Dissipation:
83W
Gate Charge(Qg):
78nC@10V
Mfr. Part #:
BSC019N04NS G-VB
Package:
DFN5x6-8
Product Description
Product Overview
The BSC019N04NS G-VB is a high-performance N-Channel Trench Power MOSFET designed for efficient synchronous rectification and secondary-side DC/DC applications. It features 100% Rg and UIS tested, offering robust performance and reliability. This device is also halogen-free, adhering to IEC 61249-2-21 standards.
Product Attributes
- Brand: VBsemi
- Certifications: Halogen-free (IEC 61249-2-21 Definition)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| N-Channel MOSFET | ||||||
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = 250 A | 40 | V | ||
| VDS Temperature Coefficient | VDS/TJ | ID = 250 A | 43 | mV/C | ||
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 A | 2.0 | 4.0 | V | |
| VGS Temperature Coefficient | VGS(th)/TJ | -6 | mV/C | |||
| Gate-Source Leakage | IGSS | VDS = 0 V, VGS = 20 V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 40 V, VGS = 0 V | 1 A | |||
| VDS = 40 V, VGS = 0 V, TJ = 55 C | 10 | A | ||||
| On-State Drain Current | ID(on) | VDS 5 V, VGS = 10 V | 100 | A | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = 10 V, ID = 20 A | 0.0025 | 0.0028 | ||
| VGS = 6.5 V, ID = 20 A | 0.0028 | |||||
| Forward Transconductance | gfs | VDS = 15 V, ID = 20 A | 102 | S | ||
| Input Capacitance | Ciss | VDS = 20 V, VGS = 0 V, f = 1 MHz | 4750 | pF | ||
| Output Capacitance | Coss | 610 | pF | |||
| Reverse Transfer Capacitance | Crss | 275 | pF | |||
| Total Gate Charge | Qg | VDS = 20 V, VGS = 10 V, ID = 20 A | 78 | 117 | nC | |
| Gate-Source Charge | Qgs | VDS = 20 V, VGS = 4.5 V, ID = 20 A | 38 | 57 | nC | |
| Gate-Drain Charge | Qgd | 11 | nC | |||
| Gate Resistance | Rg | f = 1 MHz | 0.2 | 1.4 | ||
| Turn-On Delay Time | td(on) | VDD = 20 V, RL = 2 , ID 10 A, VGEN = 10 V, Rg = 1 | 14 | 25 | ns | |
| Rise Time | tr | 9 | 18 | ns | ||
| Turn-Off Delay Time | td(off) | 6 | 41 | ns | ||
| Fall Time | tf | 9 | 18 | ns | ||
| Turn-On Delay Time | td(on) | VDD = 20 V, RL = 2 , ID 10 A, VGEN = 4.5 V, Rg = 1 | 4 | 33 | ns | |
| Rise Time | tr | 2 | 22 | ns | ||
| Turn-Off Delay Time | td(off) | 42 | 65 | ns | ||
| Fall Time | tf | 13 | 25 | ns | ||
| Continuous Source-Drain Diode Current | IS | TC = 25 C | 50 | A | ||
| Pulse Diode Forward Current | ISM | 60 | A | |||
| Body Diode Voltage | VSD | IS = 5 A | 0.75 | 1.1 | V | |
| Body Diode Reverse Recovery Time | trr | IF = 10 A, dI/dt = 100 A/s, TJ = 25 C | 0 | 60 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | 48 | 72 | nC | ||
| Reverse Recovery Fall Time | tf | 24 | ns | |||
| Reverse Recovery Rise Time | tr | 16 | ns |
2504171620_VBsemi-Elec-BSC019N04NS-G-VB_C5878785.pdf
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