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quality power semiconductor VBsemi Elec VBP16I20 600V trench and fieldstop IGBT for industrial applications factory
quality power semiconductor VBsemi Elec VBP16I20 600V trench and fieldstop IGBT for industrial applications factory

power semiconductor VBsemi Elec VBP16I20 600V trench and fieldstop IGBT for industrial applications

Key Attributes
Model Number: VBP16I20
Product Custom Attributes
Mfr. Part #:
VBP16I20
Package:
TO-247
Product Description

Product Overview

The VBP16I20 is a 600V Trench and Fieldstop IGBT designed for high-speed switching applications. It features very low VCEsat, low turn-off losses, and ultra-low gate charge (Qg), making it suitable for demanding power supply and industrial applications. Key applications include telecommunications power supplies, lighting ballasts, consumer and computing power supplies, industrial welding and battery chargers, renewable energy inverters, and general switch-mode power supplies (SMPS).

Product Attributes

  • Brand: VBsemi
  • Model: VBP16I20
  • Package: TO-247
  • Technology: Trench and Fieldstop IGBT
  • Certifications: RoHS compliant, Halogen-free

Technical Specifications

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Collector-Emitter Voltage VCE VGE = 0 V, IC = 250 A 600 - - V
Gate-Source Threshold Voltage VGE(th) VCE = VGE, ID = 250 A 4 5 6 V
Zero Gate Voltage Collector Current ICES VCE = 600 V, VGE = 0 V, TJ = 25 C - 1 20 A
Gate-Emitter Leakage Current IGES VCE = 0 V, VGS = 20 V - - 2 nA
Collector-Emitter Saturation Voltage VCE(sat) VGE = 15 V, IC = 20 A - 1.51 1.8 V
Input Capacitance Cies VGE = 0 V, VCE = 25 V, f = 500 KHz - 2200 - pF
Output Capacitance Coes VGE = 0 V, VCE = 25 V, f = 500 KHz - 162 - pF
Reverse Transfer Capacitance Cres VGE = 0 V, VCE = 25 V, f = 500 KHz - 121 - pF
Total Gate Charge Qg IC = 20 A, VCE = 400 V, VGE = 20 V - 118 - nC
Diode Forward Current IF - - - 20 A
Diode Forward Voltage VF IF = 20 A - - 2.1 V
Reverse Recovery Time trr TJ = 25 C, IF = 20 A, dIF/dt = 200 A/s, VR = 400 V - - 45 ns
Maximum Junction-to-Case Thermal Resistance RthJC - - 0.5 - C/W
Maximum Junction Temperature TJ - -55 - 175 C
Continuous Collector Current IC TC = 25 C - - 40 A
Continuous Collector Current IC TC = 100 C - - 20 A
Pulsed Collector Current ICM - - - 60 A
Maximum Power Dissipation PD TC = 25 C - - 266 W
Maximum Power Dissipation PD TC = 100 C - - 158 W

2412131800_VBsemi-Elec-VBP16I20_C42412440.pdf

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