WEIDA BT151S-500R 118 triac designed for operation in solid state relays and power charger applications
Key Attributes
Model Number:
BT151S-500R,118
Product Custom Attributes
Holding Current (Ih):
30mA
Current - Gate Trigger(Igt):
15mA
Voltage - On State(Vtm):
1.75V
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
12A
Peak Off - State Voltage(Vdrm):
650V
Current - Surge(Itsm@f):
120A@50Hz
SCR Type:
-
Mfr. Part #:
BT151S-500R,118
Package:
TO-252-4R
Product Description
Product Overview
The BT151S series of silicon controlled rectifiers from Jiangsu Weida Semiconductor Co., Ltd. offers high current surge capability and excellent resistance to electromagnetic interference due to its high dv/dt rate. These triacs are particularly recommended for applications such as solid-state relays, motorcycles, power chargers, and T-tools.
Product Attributes
- Brand: Jiangsu Weida Semiconductor Co., Ltd.
- Product Series: 12A Triacs
- Model Number: BT151S-500R,118
- Revision: 18.0
- Date: 2020
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| RMS on-state current | IT(RMS) | 12 | A | |
| Non repetitive surge peak on-state current (full cycle, F=50Hz) | ITSM | 120 | A | |
| I2t value for fusing (tp=10ms) | I2t | 72 | A2s | |
| Critical rate of rise of on-state current(IG=2IGT) | dI/dt | 50 | A/s | |
| Peak gate current | IGM | 2 | A | |
| Average gate power dissipation | PG(AV) | 0.5 | W | |
| Peak gate power | PGM | 5 | W | |
| Storage junction temperature range | Tstg | -40~150 | ||
| Operating junction temperature range | Tj | -40~125 | ||
| Repetitive peak off-state voltage (Tj=25) | VDRM | 650 | V | |
| Repetitive peak reverse voltage (Tj=25) | VRRM | 650 | V | |
| Gate trigger current (VD=12V, RL=33) | IGT | 15 | mA | MAX |
| Gate trigger voltage (VD=12V, RL=33) | VGT | 1.5 | V | MAX |
| Gate threshold voltage (VD=VDRM, Tj=110) | VGD | 0.2 | V | MAX |
| Gate voltage for sustained conduction (IT=50mA) | VIH | 30 | mA | MAX |
| Latching current (IG=1.2IGT) | IL | 40 | mA | MAX |
| Critical rate of rise of off-state voltage (VD=2/3VDRM, Tj=125, Gate open) | dV/dt | 200 | V/s | |
| On-state voltage (ITM=23A, tp=380s, Tj=25) | VTM | 1.75 | V | MAX |
| Off-state current (VD=VDRM=VRRM, Tj=25) | IDRM/IRRM | 5 | A | MAX |
| Off-state current (VD=VDRM=VRRM, Tj=110) | IDRM/IRRM | 0.5 | mA | MAX |
| Junction to case thermal resistance (AC) TO-251-4R/TO-252-4R | Rth(j-c) | 1.4 | /W | |
| Junction to case thermal resistance (AC) TO-220BNon-Ins/TO-220C | Rth(j-c) | 1.3 | /W | |
| Junction to case thermal resistance (AC) TO-220F | Rth(j-c) | 1.6 | /W | |
| Junction to case thermal resistance (AC) TO-263 | Rth(j-c) | 1.1 | /W | |
| Junction to case thermal resistance (AC) TO-220A(Ins) | Rth(j-c) | 1.5 | /W |
2410122042_WEIDA-BT151S-500R-118_C19630726.pdf
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