VISHAY DF01S-E3 77 glass passivated miniature surface mount bridge rectifier designed for AC DC rectification
Key Attributes
Model Number:
DF01S-E3/77
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
50A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
1.1V@1A
Current - Rectified:
1A
Voltage - DC Reverse(Vr):
100V
Mfr. Part #:
DF01S-E3/77
Package:
DF-S
Product Description
Product Overview
The Vishay General Semiconductor DF005S to DF10S series are miniature, glass-passivated, single-phase surface-mount bridge rectifiers. These rectifiers are designed for general-purpose AC/DC full-wave rectification in various applications including SMPS, lighting ballasts, adapters, battery chargers, home appliances, office equipment, and telecommunication systems. They feature high surge current capability, UL recognition, and meet MSL level 1 standards, making them ideal for automated placement.
Product Attributes
- Brand: Vishay General Semiconductor
- Certifications: UL recognition, file number E54214
- Material: Molding compound meets UL 94 V-0 flammability rating
- Compliance: RoHS-compliant (E3 suffix)
- Terminal Plating: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102
- Whisker Test: E3 suffix meets JESD 201 class 1A whisker test
Technical Specifications
| Parameter | Symbol | DF005S | DF01S | DF02S | DF04S | DF06S | DF08S | DF10S | Unit |
| Device marking code | DF005S | DF01S | DF02S | DF04S | DF06S | DF08S | DF10S | ||
| Maximum repetitive peak reverse voltage | VRRM | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum RMS voltage | VRMS | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| Maximum DC blocking voltage | VDC | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum average forward output rectified current at TA = 40 C | IF(AV) | 1.0 | A | ||||||
| Peak forward surge current single half sine-wave superimposed on rated load | IFSM | 50 | A | ||||||
| Rating for fusing (t < 8.3 ms) | I2t | 10 | A2s | ||||||
| Operating junction and storage temperature range | TJ, TSTG | -55 to +150 | C | ||||||
| Maximum instantaneous forward voltage drop per diode at IF = 1.0 A | VF | 1.1 | V | ||||||
| Maximum DC reverse current at rated DC blocking voltage per diode TA = 25 C | IR | 5.0 | A | ||||||
| Maximum DC reverse current at rated DC blocking voltage per diode TA = 125 C | IR | 500 | A | ||||||
| Typical junction capacitance per diode (f = 1.0 MHz, VR = 4.0 V) | CJ | 25 | pF | ||||||
| Typical thermal resistance (1) (Mounted on PCB with 0.51" x 0.51" copper pads) | RJA | 40 | C/W | ||||||
| Typical thermal resistance (1) (Mounted on PCB with 0.51" x 0.51" copper pads) | RJL | 15 | C/W | ||||||
2410121847_VISHAY-DF01S-E3-77_C428753.pdf
Related Products
High Reliability Surface Mounted Rectifier ZHIDE SS510A Molded Plastic Epoxy UL 94V 0 Flame Retardant
Product OverviewThe SS52A-SS520A series are surface-mounted Schottky barrier rectifiers designed for high-reliability applications. They offer low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering. These rectifiers are compliant with RoHS standards, ...
N Channel Enhancement Mode MOSFET YANGJIE YJG130G04CQ Ideal for Power Switching and DC DC Conversion
Product OverviewThe YJG130G04CQ is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, a high-density cell design for low RDS(ON), and an excellent package for heat dissipation. This transistor ...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
