Glass Passivated Single Phase Bridge Rectifier VISHAY DF01M-E3/45 Ideal for Power Supply and Lighting
Key Attributes
Model Number:
DF01M-E3/45
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
50A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - Forward(Vf@If):
1.1V@1A
Current - Rectified:
1A
Voltage - DC Reverse(Vr):
100V
Mfr. Part #:
DF01M-E3/45
Package:
EDIP-4
Product Description
Product Overview
The Vishay General Semiconductor DF005M, DF01M, DF02M, DF04M, DF06M, DF08M, DF10M are miniature glass passivated single-phase bridge rectifiers designed for printed circuit boards and automated insertion. They offer high surge current capability and are suitable for general-purpose AC/DC full-wave rectification in various applications including SMPS, lighting ballasts, adapters, battery chargers, home appliances, office equipment, and telecommunication systems.
Product Attributes
- Brand: Vishay General Semiconductor
- Certifications: UL recognition, file number E54214
- Material categorization: RoHS-compliant (E3 suffix)
- Case: DFM
- Molding compound meets UL 94 V-0 flammability rating
- Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102
- E3 suffix meets JESD 201 class 1A whisker test
Technical Specifications
| Device Marking Code | DF005 | DF01 | DF02 | DF04 | DF06 | DF08 | DF10 | Unit |
| Maximum repetitive peak reverse voltage (VRRM) | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum RMS voltage (VRMS) | 35 | 70 | 140 | 280 | 420 | 560 | 700 | V |
| Maximum DC blocking voltage (VDC) | 50 | 100 | 200 | 400 | 600 | 800 | 1000 | V |
| Maximum average forward output rectified current at TA = 40 C (IF(AV)) | 1.0 | A | ||||||
| Peak forward surge current single sine-wave superimposed on rated load (IFSM) | 50 | A | ||||||
| Rating for fusing (t < 8.3 ms) (I2t) | 10 | As | ||||||
| Operating junction and storage temperature range (TJ, TSTG) | -55 to +150 | C | ||||||
| Maximum instantaneous forward voltage drop per diode (VF) at IF = 1.0 A | 1.1 | V | ||||||
| Maximum reverse current at rated DC blocking voltage per diode (IR) at TA = 25 C | 5.0 | A | ||||||
| Maximum reverse current at rated DC blocking voltage per diode (IR) at TA = 125 C | 500 | A | ||||||
| Typical junction capacitance per diode (CJ) at 4.0 V, 1 MHz | 25 | pF | ||||||
| Typical thermal resistance junction to ambient (RJA) | 40 | C/W | ||||||
| Typical thermal resistance junction to lead (RJL) | 15 | C/W | ||||||
2410010132_VISHAY-DF01M-E3-45_C5122792.pdf
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