High Current Industrial Thyristors VISHAY VS-ST280C06C0 with Metal Case and Ceramic Insulator Package
Key Attributes
Model Number:
VS-ST280C06C0
Product Custom Attributes
Holding Current (Ih):
600mA
Current - Gate Trigger(Igt):
150mA
Voltage - On State(Vtm):
1.36V
Current - On State(It(RMS)):
960A
Peak Off - State Voltage(Vdrm):
600V
SCR Type:
1 SCR
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
3V
Mfr. Part #:
VS-ST280C06C0
Package:
TO-200AB
Product Description
Product Overview
The Vishay Semiconductors VS-ST280C Series are Phase Control Thyristors featuring a center amplifying gate and a metal case with a ceramic insulator. Designed and qualified for industrial-level applications, these thyristors are suitable for DC motor controls, controlled DC power supplies, and AC controllers. They are available in the international standard A-PUK (TO-200AB) package.
Product Attributes
- Brand: Vishay Semiconductors
- Case Style: A-PUK (TO-200AB)
- Material Categorization: For definitions of compliance, please see www.vishay.com/doc?99912
Technical Specifications
| Parameter | Symbol | Test Conditions | Values | Units |
|---|---|---|---|---|
| Primary Characteristics | ||||
| Average On-State Current | IT(AV) | 500 | A | |
| Repetitive Peak Off-State Voltage | VDRM/VRRM | 400, 600 | V | |
| On-State Voltage Drop | VTM | 1.36 | V | |
| Gate Trigger Current | IGT | TJ = 25 C | 90 | mA |
| Operating Junction Temperature | TJ | -40 to +125 | C | |
| Package | A-PUK (TO-200AB) | |||
| Circuit Configuration | Single SCR | |||
| Major Ratings and Characteristics | ||||
| Average On-State Current | IT(AV) | Ths = 55 C | 500 | A |
| RMS On-State Current | IT(RMS) | Ths = 25 C | 960 | A |
| Peak Surge Current (50 Hz) | ITSM | 7850 | A | |
| Peak Surge Current (60 Hz) | ITSM | 8220 | A | |
| It (50 Hz) | 308 | kAs | ||
| It (60 Hz) | 281 | kAs | ||
| Repetitive Peak Off-State Voltage | VDRM/VRRM | 400 to 600 | V | |
| Typical Turn-off Time | tq | 100 | s | |
| Operating Junction Temperature | TJ | -40 to 125 | C | |
| Absolute Maximum Ratings | ||||
| Maximum Average On-State Current | IT(AV) | 180 conduction, half sine wave, double side (single side) cooled | 500 (185) | A |
| Heatsink Temperature | 55 (85) | C | ||
| Maximum RMS On-State Current | IT(RMS) | DC at 25 C heatsink temperature, double side cooled | 960 | A |
| Maximum Peak, One-Cycle Non-Repetitive Surge Current (t = 10 ms) | ITSM | No voltage reapplied, Sinusoidal half wave, initial TJ = TJ maximum | 7850 | A |
| Maximum Peak, One-Cycle Non-Repetitive Surge Current (t = 8.3 ms) | ITSM | No voltage reapplied, Sinusoidal half wave, initial TJ = TJ maximum | 8220 | A |
| Maximum It for Fusing (t = 10 ms) | It | No voltage reapplied | 308 | kAs |
| Maximum It for Fusing (t = 8.3 ms) | It | No voltage reapplied | 281 | kAs |
| Maximum On-State Voltage | VTM | Ipk = 1050 A, TJ = 125 C, tp = 10 ms sine pulse | 1.36 | V |
| Maximum Holding Current | IH | TJ = 25 C, anode supply 12 V, resistive load | 600 | mA |
| Maximum (typical) Latching Current | IL | 1000 (300) | ||
| Switching Parameters | ||||
| Maximum Non-Repetitive Rate of Rise of Turned-On Current | dI/dt | Gate drive 20 V, 20 , tr 1 s, TJ = TJ maximum, anode voltage 80 % VDRM | 1000 | A/s |
| Typical Delay Time | td | Gate current 1 A, dIg/dt = 1 A/s, Vd = 0.67 % VDRM, TJ = 25 C | 1.0 | s |
| Typical Turn-Off Time | tq | ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/s, VR = 50 V, dV/dt = 20 V/s, gate 0 , tp = 500 s | 100 | s |
| Blocking Parameters | ||||
| Maximum Critical Rate of Rise of Off-State Voltage | dV/dt | TJ = TJ maximum, linear to 80 % rated VDRM | 500 | V/s |
| Maximum Peak Reverse and Off-State Leakage Current | IRRM, IDRM | TJ = TJ maximum, rated VDRM/VRRM applied | 30 | mA |
| Triggering Parameters | ||||
| Maximum Peak Gate Power | PGM | TJ = TJ maximum, tp 5 ms | 10.0 | W |
| Maximum Average Gate Power | PG(AV) | TJ = TJ maximum, f = 50 Hz, d% = 50 | 2.0 | |
| Maximum Peak Positive Gate Current | IGM | TJ = TJ maximum, tp 5 ms | 3.0 | A |
| Maximum Peak Positive Gate Voltage | +VGM | TJ = TJ maximum, tp 5 ms | 20 | V |
| Maximum Peak Negative Gate Voltage | -VGM | 5.0 | ||
| DC Gate Current Required to Trigger (TJ = -40 C) | IGT | Anode to cathode applied | 180 | mA |
| DC Gate Current Required to Trigger (TJ = 25 C) | IGT | Anode to cathode applied | 90 to 150 | mA |
| DC Gate Current Required to Trigger (TJ = 125 C) | IGT | Anode to cathode applied | 40 | mA |
| DC Gate Voltage Required to Trigger (TJ = -40 C) | VGT | 2.9 | V | |
| DC Gate Voltage Required to Trigger (TJ = 25 C) | VGT | 1.8 to 3.0 | V | |
| DC Gate Voltage Required to Trigger (TJ = 125 C) | VGT | 1.2 | V | |
| Maximum Gate Current Not to Trigger (TJ = TJ maximum) | IGD | Anode to cathode applied | 10 | mA |
| DC Gate Voltage Not to Trigger | VGD | 0.30 | V | |
| Thermal and Mechanical Specifications | ||||
| Maximum Operating Junction Temperature Range | TJ | -40 to 125 | C | |
| Maximum Storage Temperature Range | TStg | -40 to 150 | C | |
| Maximum Thermal Resistance, Junction to Heatsink (DC operation, single side cooled) | RthJ-hs | 0.17 | K/W | |
| Maximum Thermal Resistance, Junction to Heatsink (DC operation, double side cooled) | RthJ-hs | 0.08 | K/W | |
| Maximum Thermal Resistance, Case to Heatsink (DC operation, single side cooled) | RthC-hs | 0.033 | K/W | |
| Maximum Thermal Resistance, Case to Heatsink (DC operation, double side cooled) | RthC-hs | 0.017 | K/W | |
| Mounting Force | 4900 (500) | N (kg) | ||
| Approximate Weight | 50 | g | ||
| Ordering Information | ||||
| Device Code Format | VS-ST280CxxC-y | |||
| Voltage Code (xx) | 04 = 400V, 06 = 600V | |||
| Case Type (C) | C = A-PUK (TO-200AB) | |||
| Terminal Type (y) | 1 = fast-on terminals (gate and auxiliary cathode unsoldered leads) | |||
| Critical dV/dt (8th digit) | None = 500 V/s (standard selection) | |||
Dimensions: See www.vishay.com/doc?95074
Links to Related Documents:
- Dimensions: www.vishay.com/doc?95074
2411272205_VISHAY-VS-ST280C06C0_C17690738.pdf
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