16A Triac Semiconductor Device WEIDA BT139-600E Suitable for Medium Small Resistance Power Loads
Key Attributes
Model Number:
BT139-600E
Product Custom Attributes
Current - Gate Trigger(Igt):
40mA
Voltage - On State(Vtm):
1.6V
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
16A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
140A
SCR Type:
-
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.3V
Mfr. Part #:
BT139-600E
Package:
TO-263
Product Description
Product Overview
The BT138 Series 16A Triacs from Jiangsu Weida Semiconductor Co., Ltd. are designed for middle and small resistance type power loads. They are recommended due to their low holding and latching current characteristics.
Product Attributes
- Brand: Jiangsu Weida Semiconductor Co., Ltd.
- Series: BT138 Series
- Product Type: Triacs
- Current Rating: 16A
- Revision: 9.0
- Year: 2020
Technical Specifications
| Parameter | Symbol | Test Condition | Quadrant | Value | Unit | Notes |
| Storage junction temperature range | Tstg | -40~150 | ||||
| Operating junction temperature range | Tj | -40~125 | ||||
| Repetitive peak off-state voltage | VDRM/VRRM | (Tj=25) | 600/800 | V | ||
| RMS on-state current | IT(RMS) | 16 | A | |||
| Non repetitive surge peak on-state current | ITSM | (full cycle, F=50Hz) | 140 | A | ||
| I2t value for fusing | I2t | (tp=10ms) | 98 | A2s | ||
| Critical rate of rise of on-state current | dI/dt | (IG=2IGT) | -- | 50 | A/s | |
| Critical rate of rise of on-state current | dI/dt | (IG=2IGT) | 10 | A/s | ||
| Peak gate current | IGM | 2 | A | |||
| Average gate power dissipation | PG(AV) | 0.5 | W | |||
| Peak gate power | PGM | 5 | W | |||
| Gate Trigger Current | IGT | VD=12V, RL=33 | -- | MAX 5 | mA | D package |
| Gate Trigger Current | IGT | VD=12V, RL=33 | -- | MAX 10 | mA | E package |
| Gate Trigger Current | IGT | VD=12V, RL=33 | -- | MAX 25 | mA | F package |
| Gate Trigger Current | IGT | VD=12V, RL=33 | 10 | mA | D package | |
| Gate Trigger Current | IGT | VD=12V, RL=33 | 25 | mA | E package | |
| Gate Trigger Current | IGT | VD=12V, RL=33 | 70 | mA | F package | |
| Gate Trigger Voltage | VGT | --- | 1.3 | V | ||
| Gate Open Voltage | VGD | VD=VDRM | --- | MIN 0.2 | V | |
| Holding Current | IH | IT=100mA | MAX 10 | mA | D package | |
| Holding Current | IH | IT=100mA | MAX 20 | mA | E package | |
| Holding Current | IH | IT=100mA | MAX 40 | mA | F package | |
| Latching Current | IL | IG=1.2IGT | -- | MAX 15 | mA | D package |
| Latching Current | IL | IG=1.2IGT | -- | MAX 30 | mA | E package |
| Latching Current | IL | IG=1.2IGT | -- | MAX 50 | mA | F package |
| Latching Current | IL | IG=1.2IGT | MAX 20 | mA | D package | |
| Latching Current | IL | IG=1.2IGT | MAX 40 | mA | E package | |
| Latching Current | IL | IG=1.2IGT | MAX 70 | mA | F package | |
| Critical dV/dt | dV/dt | VD=0.66VDRM Tj=125 Gate open | MIN 20 | V/s | D package | |
| Critical dV/dt | dV/dt | VD=0.66VDRM Tj=125 Gate open | MIN 50 | V/s | E package | |
| Critical dV/dt | dV/dt | VD=0.66VDRM Tj=125 Gate open | MIN 100 | V/s | F package | |
| On-state voltage | VTM | ITM=20A tp=380s Tj=25 | MAX 1.6 | V | ||
| Off-state current | IDRM/IRRM | VDRM= VRRM Tj=25 | MAX 5 | A | ||
| Off-state current | IDRM/IRRM | VDRM= VRRM Tj=125 | MAX 1 | mA | ||
| Thermal Resistance (junction to case, AC) | Rth(j-c) | TO-220C | 1.3 | /W | ||
| Thermal Resistance (junction to case, AC) | Rth(j-c) | TO-220AIns | 2.0 | /W | ||
| Thermal Resistance (junction to case, AC) | Rth(j-c) | TO-220F | 2.4 | /W | ||
| Thermal Resistance (junction to case, AC) | Rth(j-c) | TO-263 | 0.9 | /W |
2410122027_WEIDA-BT139-600E_C2901187.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
YANGJIE DTC144EUAQ NPN Digital Transistor with Built in Resistors Providing Performance in Compact Packages
Product OverviewThe DTC144EUAQ is an NPN Digital Transistor with built-in resistors, designed to simplify circuit design by eliminating the need for external input resistors. It is ideal for configuring inverter circuits and offers easy setup for on/off conditions, reducing component count and board ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
