Amplifier Transistor Featuring Collector Current 0.2A WILLSEMI WPT2F06-3/TR PNP General Purpose Type
Key Attributes
Model Number:
WPT2F06-3/TR
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
100@10mA,1V
Transition Frequency(fT):
250MHz
Vce Saturation(VCE(sat)):
400mV
Type:
PNP
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-
Mfr. Part #:
WPT2F06-3/TR
Package:
SOT-23
Product Description
Product Overview
The WPT2F06 is a PNP general-purpose transistor designed for amplifier applications. It is Pb-free and Halogen-free, offering a complementary option to the WNT2F04. With a collector current of -0.2A, it is suitable for various electronic circuits.
Product Attributes
- Brand: Will Semiconductor Ltd.
- Certifications: Pb-free, Halogen-free
- Complementary to: WNT2F04
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Collector-emitter Voltage | VCEO | -40 | V | |||
| Collector-base Voltage | VCBO | -40 | V | |||
| Emitter-base Voltage | VEBO | -5 | V | |||
| Collector Current | IC | -200 | mA | |||
| Collector Power Dissipation | PC | 200 | mW | |||
| Thermal Resistance Junction To Ambient | RJA | 625 | C /W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature Range | Tstg | -55 | 150 | C | ||
| Collector-emitter breakdown voltage | BVCEO | IC=-1mA, IB=0mA | -40 | V | ||
| Collector-base breakdown voltage | BVCBO | IC=10uA, IE=0mA | -40 | V | ||
| Emitter-base breakdown voltage | BVEBO | IE=-10uA, IC=0mA | -5 | V | ||
| Collector cutoff current | ICEX | VCE=-30V,VEB(OFF)=-3V | -50 | nA | ||
| Collector cutoff current | ICBO | VCB=-40V, IE=0A | -100 | nA | ||
| Emitter cutoff current | IEBO | VEB=-5V, IC=0A | -100 | nA | ||
| Collector-emitter saturation voltage | VCE(sat) | IC=-50mA, IB=-5mA | -0.4 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=-50mA, IB=-5mA | -0.95 | V | ||
| DC current gain | hFE | IC=-10mA , VCE=-1V | 100 | 300 | ||
| DC current gain | hFE | IC=-50mA , VCE=-1V | 60 | |||
| DC current gain | hFE | IC=-100mA , VCE=-1V | 30 | |||
| Transition frequency | fT | VCE=-20V,IC=-10mA, f=100MHz | 250 | MHz | ||
| Noise figure | NF | IC=-100A; VCE=-5V; RS=1 k; f=10Hz to15.7 kHz | 4 | dB | ||
| Delay time | td | VCC=-3V, VBE(off)=-0.5V IC=-10mA,IB1=-1mA | 35 | ns | ||
| Rise time | tr | 35 | ns | |||
| Storage time | ts | VCC=-3V, IC=-10mA, IB1= IB2=-1mA | 225 | ns | ||
| Fall time | tf | 75 | ns |
2410121332_WILLSEMI-WPT2F06-3-TR_C501343.pdf
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