650 Volt 20 Amp Silicon Carbide Wolfspeed C6D20065G Schottky Diode for Industrial Power Applications

Key Attributes
Model Number: C6D20065G
Product Custom Attributes
Mfr. Part #:
C6D20065G
Package:
TO-263
Product Description

Wolfspeed C6D20065G 650 V, 20 A Silicon Carbide Schottky Diode

Product Overview

The Wolfspeed C6D20065G is a 650 V, 20 A Silicon Carbide (SiC) Schottky Barrier diode designed to enhance power electronics systems. Leveraging SiC technology, this diode offers higher efficiency, faster switching frequencies, and improved power density compared to traditional silicon-based solutions. Its design allows for easy paralleling without thermal runaway concerns, contributing to lower overall system costs through reduced cooling requirements and improved thermal performance. This diode is suitable for a wide range of industrial and power supply applications.

Product Attributes

  • Brand: Wolfspeed
  • Material: Silicon Carbide (SiC)
  • Product Line: 6th Generation
  • Certifications: REACh, RoHS, Halogen-Free

Technical Specifications

Parameter Symbol Value Unit Test Conditions Notes
Repetitive Peak Reverse Voltage VRRM 650 V DC Blocking Voltage
Continuous Forward Current IF 64 A TJ = 25 C Fig. 3
32 A TJ = 125 C
20 A TJ = 150 C
Repetitive Peak Forward Surge Current IFRM 78 A TC = 25 C, tp = 10 ms, Half Sine Wave
45 A TC = 110 C, tp = 10 ms, Half Sine Wave
Non-Repetitive Forward Surge Current IFSM 135 A TC = 25 C, tp = 10 ms, Half Sine Wave Fig. 8
111 A TC = 110 C, tp = 10 ms, Half Sine Wave
Non-Repetitive Peak Forward Surge Current IF,Max 1550 A TC = 25 C, tp = 10 s, Pulse
1290 A TC = 110 C, tp = 10 s, Pulse
Power Dissipation Ptot 163 W TJ = 25 C Fig. 4
71 W TJ = 110 C
i2t value i2dt 91 As TC= 25C, tp=10ms
62 As TC = 110C, tp=10ms
Forward Voltage VF 1.27 V IF = 20 A, Tj = 25 C Fig. 1
1.37 V IF = 20 A, Tj = 175 C
Reverse Current IR 5 A VR = 650 V, Tj = 25 C Fig. 2
40 A VR = 650 V, Tj = 175 C
Total Capacitive Charge QC 62 nC VR = 400 V, Tj = 25 C Fig. 5
Total Capacitance C 1153 pF VR = 0 V, Tj = 25 C, f = 1 MHz Fig. 6
120 pF VR = 200 V, Tj = 25 C, f = 1 MHz
96 pF VR = 400 V, Tj = 25 C, f = 1 MHz
Capacitance Stored Energy Ec 9.5 J VR = 400 V Fig. 7
Thermal Resistance, Junction to Case (Typical) R,JC (TYP) 0.76 C / W
Junction Temperature Tj -55 to +175 C
Case & Storage Temperature Tc -55 to +175 C

Applications

  • Industrial Power Supplies
  • Uninterruptible & AUX Power Supplies
  • Switch Mode Power Supplies
  • Solar Inverters
  • Power Factor Correction
  • Server/Telecom Power Supplies

Package Information

Package Type: TO-263-2

Dimensions:

Symbol MIN (mm) MAX (mm)
A 4.32 4.57
A1 --- 0.25
b 0.71 0.94
b2 1.15 1.40
c 0.356 0.635
c2 1.22 1.40
D 8.89 9.40
D1 6.48 6.88
E 10.04 10.28
E1 7.535 8.425
e 2.54 ---
L 14.73 15.75
L1 2.29 2.79
L2 1.15 1.39
0 8

Pin Configuration: 1 CATHODE, 2 ANODE, 3 CATHODE

Product Ordering Information

Order Number Packing Type
C6D20065G Tube
C6D20065G-TR Tape and Reel

2412111109_Wolfspeed-C6D20065G_C20590750.pdf

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