Power Switching Transistor XCH XCH4N80N Silicon N-Channel MOSFET with Low Conduction Loss and High Avalanche Energy
Key Attributes
Model Number:
XCH4N80N
Product Custom Attributes
Mfr. Part #:
XCH4N80N
Package:
TO-251
Product Description
Product Overview
The XCH4N80N is a silicon N-channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This technology enhances efficiency by reducing conduction loss, improving switching performance, and increasing avalanche energy. Designed for miniaturization and higher efficiency in power switching circuits, this transistor is available in a RoHS-compliant TO-251 package.
Product Attributes
- Brand: XCH
- Material: Silicon N-Channel Power MOSFET
- Certifications: RoHS
Technical Specifications
| Model | VDSS (V) | ID (A) | PD (W) | RDS(ON) Typ. () | EAsa2 (mJ) | VGS(TH) Typ. (V) | Qg Typ. (nC) | trr Typ. (ns) |
| XCH4N80N | 800 | 4 | 45 | 3.0 | 300 | 2.0 | 35 | 820 |
2512121540_XCH-XCH4N80N_C53155323.pdf
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