switching solution XCH 2N70 N channel power MOSFET for motor controls and power supply applications
Key Attributes
Model Number:
2N70
Product Custom Attributes
Drain To Source Voltage:
700V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.3Ω@10V,1A
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
7pF
Number:
1 N-channel
Output Capacitance(Coss):
50pF
Pd - Power Dissipation:
750mW
Input Capacitance(Ciss):
350pF@25V
Gate Charge(Qg):
11nC@10V
Mfr. Part #:
2N70
Package:
TO-92
Product Description
Product Overview
The 2N70 is a high voltage N-Channel Power MOSFET designed for high-speed switching applications. It offers improved characteristics such as fast switching time, low gate charge, low on-state resistance, and high avalanche ruggedness. This MOSFET is ideal for use in power supplies, PWM motor controls, high-efficiency DC to DC converters, and bridge circuits.
Product Attributes
- Brand: 2N70
- Type: N-Channel Power MOSFET
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings | ||||||
| Gate-Drain Voltage | VDSS | 700 | V | |||
| Gate-Source Voltage | VGSS | ±30 | V | |||
| Drain Current Continuous | ID | TA = 25 ℃ | 2.0 | A | ||
| Drain Current Pulsed | IDM | Note 2 | 8.0 | A | ||
| Avalanche Energy Single Pulsed | EAS | Note 3 | 140 | mJ | ||
| Avalanche Energy Repetitive | EAR | Note 2 | 2.8 | |||
| Peak Diode Recovery dv/dt | dv/dt | Note 4 | 4.5 | V/ns | ||
| Power Dissipation | PD | 0.75 | W | |||
| Operation Junction Temperature | TJ | 150 | ℃ | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | ||
| Thermal Characteristics | ||||||
| Junction to Ambient | RθJA | 120 | ℃/W | |||
| Junction to Case | RθJC | 12 | ℃/W | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID = 250μA | 700 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 650V, VGS = 0V | 10 | μA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 480V, TC = 125℃ | 100 | |||
| Gate-Body Leakage Current Forward | IGSS | VGS = 30V, VDS = 0V | 100 | nA | ||
| Gate-Body Leakage Current Reverse | IGSS | VGS = -30V, VDS = 0V | -100 | |||
| Breakdown Voltage Temperature Coefficient | ΔBVDSS/ΔTJ | ID = 250 μA | 0.4 | V/℃ | ||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=250μA | 2 | 4 | V | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS = 10V, ID =1A | 6.3 | Ω | ||
| Forward Transconductance | gFS | VDS=50V, ID=1A(Note1) | 2.25 | S | ||
| Dynamic Characteristics | ||||||
| Input Capacitance | CISS | VDS =25V, VGS =0V, f=1MHz | 350 | pF | ||
| Output Capacitance | COSS | 50 | pF | |||
| Reverse Transfer Capacitance | CRSS | 7 | pF | |||
| Switching Characteristics | ||||||
| Turn-On Delay Time | tD(ON) | VDD =350V, ID=2.0A, RG=25Ω(Note1,2) | 30 | ns | ||
| Rise Time | tR | 60 | ns | |||
| Turn-Off Delay Time | tD(OFF) | 50 | ns | |||
| Fall Time | tF | 60 | ns | |||
| Total Gate Charge | QG | VDS =560V, VGS =10V, ID=2.0A (Note1,2) | 11 | nC | ||
| Gate-Source Charge | QGS | 1.6 | nC | |||
| Gate-Drain Charge | QGD | 4.3 | nC | |||
| Drain-Source Diode Characteristics | ||||||
| Drain-Source Diode Forward Voltage | VSD | VGS = 0 V, ISD = 2.0 A | 1.4 | V | ||
| Continuous Drain-Source Current | ISD | 2.0 | A | |||
| Pulsed Drain-Source Current | ISM | 8.0 | A | |||
| Reverse Recovery Time | tRR | VGS = 0 V, ISD = 2.4 A, di/dt =100 A/μs (Note1) | 260 | ns | ||
| Reverse Recovery Charge | QRR | 0.72 | μC | |||
2304250923_XCH-2N70_C5455842.pdf
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