Power MOSFET N Channel Device XCH XCH2302 Featuring Low RDS On and 5V Logic Level Control for Switches
Key Attributes
Model Number:
XCH2302
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.8A
RDS(on):
42mΩ@4.5V,3A
Operating Temperature -:
-50℃~+150℃
Gate Threshold Voltage (Vgs(th)):
900mV
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF@10V
Number:
1 N-channel
Output Capacitance(Coss):
30pF
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
160pF@10V
Gate Charge(Qg):
4nC@5V
Mfr. Part #:
XCH2302
Package:
SOT-23
Product Description
Product Overview
N Channel Advanced Power MOSFET offering low RDS(on) at VGS=5V and 5V logic level control in a SOT23 package. This Pb-free, RoHS compliant device is optimized for power management applications in portable products, including DC fans, chargers, fast switches, H-bridges, inverters, and car chargers.
Product Attributes
- Certifications: Pb-Free, RoHS Compliant
- Package: SOT23
- Marking: A2SHB
- Packing: 3000PCS/Reel
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VGS | Gate-Source Voltage | 12 | V | |||
| V(BR)DSS | Drain-Source Breakdown Voltage | 20 | V | |||
| TJ | Maximum Junction Temperature | 150 | C | |||
| TSTG | Storage Temperature Range | -50 | 150 | C | ||
| IDM | Pulse Drain Current | Tested TA=25C | 12 | A | ||
| ID | Continuous Drain Current | (VGS=-10V) TA=25C | 2.8 | A | ||
| ID | Continuous Drain Current | (VGS=-10V) TA=70C | 2.5 | A | ||
| PD | Maximum Power Dissipation | TA=25C | 1 | W | ||
| PD | Maximum Power Dissipation | TA=70C | 0.8 | W | ||
| RJA | Thermal Resistance Junction-Ambient | Mounted on Large Heat Sink | 125 | C/W | ||
| Electrical Characteristics | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V ID=250A | 20 | -- | -- | V |
| IDSS | Zero Gate Voltage Drain Current | (TA=25) VDS=20V, VGS=0V | -- | -- | 1 | A |
| IDSS | Zero Gate Voltage Drain Current | (TA=125) VDS=16V, VGS=0V | -- | -- | 100 | nA |
| IGSS | Gate-Body Leakage Current | VGS=10V, VDS=0V | -- | -- | 100 | nA |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS, ID=250A | 0.4 | 0.6 | 0.9 | V |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V, ID=3A | -- | 42 | 60 | m |
| RDS(ON) | Drain-Source On-State Resistance | VGS=3.3V, ID=2A | -- | m | ||
| Dynamic Electrical Characteristics | ||||||
| Ciss | Input Capacitance | VDS=10V, VGS=0V, f=1MHz | -- | 160 | -- | pF |
| Coss | Output Capacitance | -- | 30 | -- | pF | |
| Crss | Reverse Transfer Capacitance | -- | 25 | -- | pF | |
| Qg | Total Gate Charge | VDS=10V ID=3A, VGS=5V | -- | 4.0 | -- | nC |
| Qgs | Gate Source Charge | -- | 0.4 | -- | nC | |
| Qg d | Gate Drain Charge | -- | 1.2 | -- | nC | |
| Switching Characteristics | ||||||
| td(on) | Turn on Delay Time | VDD=10V, ID=2A, RG=3.3, VGS=4.5V | -- | 8 | -- | ns |
| tr | Turn on Rise Time | -- | 30 | -- | ns | |
| td(off) | Turn Off Delay Time | -19 | -- | -- | ns | |
| tf | Turn Off Fall Time | -- | 28 | -- | ns | |
| Source Drain Diode Characteristics | ||||||
| ISD | Source drain current(Body Diode) | TA=25 | -- | -- | 2.6 | A |
| VSD | Forward on voltage | Tj=25, ISD=2A, VGS=0V | -- | 0.87 | 1.2 | V |
2312160132_XCH-XCH2302_C7441427.pdf
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