86--136 6733 2386
quality High Reliability MOSFET XDS TX40N06B 60 Volt TrenchFET Device for Server Power and ORing Applications factory
quality High Reliability MOSFET XDS TX40N06B 60 Volt TrenchFET Device for Server Power and ORing Applications factory

High Reliability MOSFET XDS TX40N06B 60 Volt TrenchFET Device for Server Power and ORing Applications

Key Attributes
Model Number: TX40N06B
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
35A
Operating Temperature -:
-55℃~+175℃
RDS(on):
25mΩ@10V,38.8A
Gate Threshold Voltage (Vgs(th)):
2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
171pF@15V
Number:
1 N-channel
Output Capacitance(Coss):
1.725nF
Input Capacitance(Ciss):
6.201nF@15V
Pd - Power Dissipation:
3.75W
Gate Charge(Qg):
81.5nC@10V
Mfr. Part #:
TX40N06B
Package:
TO-252
Product Description

Product Overview

The TX40N06B is a 1-Channel 60-V (D-S) MOSFET featuring TrenchFET Power MOSFET technology. It is 100% Rg and UIS tested and compliant with RoHS Directive 2011/65/EU. This MOSFET is designed for applications such as OR-ing, server power supplies, and DC/DC converters.

Product Attributes

  • Brand: XDSemi (implied by www.xdssemi.com)
  • Technology: TrenchFET Power MOSFET
  • Certifications: Compliant to RoHS Directive 2011/65/EU
  • Testing: 100 % Rg and UIS Tested

Technical Specifications

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 A 60 V
VDS Temperature Coefficient VDS/TJ ID = 250 A 35 mV/C
VGS(th) Temperature Coefficient VGS(th)/TJ -7.5
Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 A 1.5 2.0 V
Gate-Source Leakage IGSS VDS = 0 V, VGS = 20 V 100 nA
Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 1 A
Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V, TJ = 55 C 10 A
On-State Drain Current ID(on) VDS 5 V, VGS = 10 V 90 A
Drain-Source On-State Resistance RDS(on) VGS = 10 V, ID = 38.8 A 0.025
Drain-Source On-State Resistance RDS(on) VGS = 4.5 V, ID = 37 A 0.030
Forward Transconductance gfs VDS = 15 V, ID = 38.8 A 160 S
Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 6201 pF
Output Capacitance Coss VDS = 15 V, VGS = 0 V, f = 1 MHz 1725 pF
Reverse Transfer Capacitance Crss VDS = 15 V, VGS = 0 V, f = 1 MHz 970 pF
Total Gate Charge Qg VDS = 15 V, VGS = 10 V, ID = 38.8 A 171 257 nC
Total Gate Charge Qg VDS = 15 V, VGS = 4.5 V, ID = 28.8 A 81.5 123 nC
Gate-Source Charge Qgs 34 nC
Gate-Drain Charge Qg 29 nC
Gate Resistance Rg f = 1 MHz 1.4 2.1
Turn-On Delay Time td(on) VDD = 15 V, RL = 0.625 , ID = 24 A, VGEN = 10 V, Rg = 1 18 27 ns
Rise Time tr VDD = 15 V, RL = 0.625 , ID = 24 A, VGEN = 10 V, Rg = 1 11 17 ns
Turn-Off Delay Time td(off) VDD = 15 V, RL = 0.625 , ID = 24 A, VGEN = 10 V, Rg = 1 70 105 ns
Fall Time tf VDD = 15 V, RL = 0.625 , ID = 24 A, VGEN = 10 V, Rg = 1 10 15 ns
Turn-On Delay Time td(on) VDD = 15 V, RL = 0.67 , ID = 22.5 A, VGEN = 4.5 V, Rg = 1 55 83 ns
Rise Time tr VDD = 15 V, RL = 0.67 , ID = 22.5 A, VGEN = 4.5 V, Rg = 1 180 270 ns
Turn-Off Delay Time td(off) VDD = 15 V, RL = 0.67 , ID = 22.5 A, VGEN = 4.5 V, Rg = 1 55 83 ns
Fall Time tf VDD = 15 V, RL = 0.67 , ID = 22.5 A, VGEN = 4.5 V, Rg = 1 12 18 ns
Continuous Source-Drain Diode Current IS TC = 25 C 120 A
Pulse Diode Forward Current ISM 120 A
Body Diode Voltage VSD IS = 22 A 0.8 1.2 V
Body Diode Reverse Recovery Time trr IF = 20 A, di/dt = 100 A/s, TJ = 25 C 52 78 ns
Body Diode Reverse Recovery Charge Qrr IF = 20 A, di/dt = 100 A/s, TJ = 25 C 70.2 105 nC
Reverse Recovery Fall Time ta IF = 20 A, di/dt = 100 A/s, TJ = 25 C 27 ns
Reverse Recovery Rise Time tb IF = 20 A, di/dt = 100 A/s, TJ = 25 C 25 ns

2410121619_XDS-TX40N06B_C448632.pdf

Related Products
quality Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly factory
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
quality Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks factory
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
quality Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy factory
Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy
Product OverviewThe DTC114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It features a moisture sensitivity level of 1 and an epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This product is ...
quality Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly factory
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.