N Channel and P Channel 40 Volt MOSFET VBsemi Elec VBE5415 for Power Electronics Applications
Key Attributes
Model Number:
VBE5415
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+175℃
RDS(on):
14mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
109pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
282pF
Input Capacitance(Ciss):
1.799nF
Pd - Power Dissipation:
108W
Gate Charge(Qg):
310nC@10V
Mfr. Part #:
VBE5415
Package:
TO-252-4L
Product Description
VBE5415 N- and P-Channel 40 V (D-S) MOSFET
The VBE5415 is a Trench Power MOSFET designed for high-efficiency applications. It features 100% Rg and UIS testing for guaranteed performance. This N- and P-channel pair MOSFET is ideal for use in CCFL inverters.
Product Attributes
- Brand: VBsemi
- Model: VBE5415
- Channel Type: N-Channel and P-Channel
- Voltage Rating: 40 V
- Package Type: TO-252-4L (D-PAK)
Technical Specifications
| Parameter | Symbol | N-Channel (Typical) | P-Channel (Typical) | Unit | |
| Drain-Source Voltage | VDS | 40 | -40 | V | |
| RDS(on) at VGS = 10 V | RDS(on) | 0.014 | 0.014 | ||
| RDS(on) at VGS = 4.5 V | RDS(on) | 0.016 | 0.016 | ||
| Continuous Drain Current (TC = 25 C) | ID | 50 | -50 | A | |
| Continuous Source Current (Diode Conduction) (TC = 25 C) | IS | 30 | -30 | A | |
| Pulsed Drain Current | IDM | 150 | -150 | A | |
| Single Pulse Avalanche Energy | EAS | 245 | 245 | mJ | |
| Maximum Power Dissipation (TC = 25 C) | PD | 108 | 108 | W | |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to +175 | C | ||
| Junction-to-Ambient Thermal Resistance (PCB Mount) | RthJA | 85 | C/W | ||
| Junction-to-Case (Drain) Thermal Resistance | RthJC | 3 | 3.1 | C/W | |
| Gate-Source Threshold Voltage (ID = 250 A) | VGS(th) | 1.0 - 3.0 | -1.0 to -3.0 | V | |
| Gate-Source Leakage (VDS = 0 V, VGS = 20 V) | IGSS | 100 | nA | ||
| Zero Gate Voltage Drain Current (VDS = 40 V, TJ = 125 C) | IDSS | 1 | A | ||
| Forward Transconductance (ID = 38 A) | gfs | 40 | 18 | S | |
| Input Capacitance (VDS = 20 V, f = 1 MHz) | Ciss | 1799 - 2248 | 2000 - 3500 | pF | |
| Output Capacitance (VDS = 20 V, f = 1 MHz) | Coss | 282 - 352 | 320 - 550 | pF | |
| Reverse Transfer Capacitance (VDS = 20 V, f = 1 MHz) | Crss | 109 - 136 | 220 - 360 | pF | |
| Total Gate Charge (ID = 10 A) | Qg | 310 | - | nC | |
| Gate-Source Charge (ID = 10 A) | Qgs | 5.7 | 5.5 | - | nC |
| Gate-Drain Charge (ID = 10 A) | Qgd | 4.8 | 10.5 | - | nC |
| Gate Resistance (f = 1 MHz) | Rg | 2 - 6.2 | 3.1 - 9.5 | ||
| Turn-On Delay Time (ID 10 A) | td(on) | 7 - 11 | 11 - 17 | ns | |
| Rise Time (ID 10 A) | tr | 21 - 32 | 9 - 14 | ns | |
| Turn-Off Delay Time (ID 10 A) | td(off) | 33 - 50 | 55 - 83 | ns | |
| Fall Time (ID 10 A) | tf | 19 - 29 | 91 - 137 | ns | |
| Source-Drain Diode Pulsed Current | ISM | 32 | A | ||
| Source-Drain Diode Forward Voltage (IS = 4 A) | VSD | 0.79 - 1.2 | 0.82 - 1.2 | V | |
2504180926_VBsemi-Elec-VBE5415_C480957.pdf
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