SOT23 packaged NPN transistor XZT MMBT5551 for medium power amplification and switching applications
Key Attributes
Model Number:
MMBT5551
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
DC Current Gain:
200@10mA,5V
Transition Frequency(fT):
300MHz
Vce Saturation(VCE(sat)):
200mV@50mA,5mA
Type:
NPN
Pd - Power Dissipation:
300mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT5551
Package:
SOT-23
Product Description
Product Overview
The MMBT5551 is an NPN transistor designed for medium power amplification and switching applications. It is complementary to the MMBT5401.
Product Attributes
- Brand: XT ELECTRONICS
- Product Type: TRANSISTOR (NPN)
- Package: SOT-23
- Marking: G1
Technical Specifications
| Symbol | Parameter | Test conditions | Min | Typ | Max | Unit |
| VCBO | Collector-Base Voltage | 180 | V | |||
| VCEO | Collector-Emitter Voltage | 160 | V | |||
| VEBO | Emitter-Base Voltage | 6 | V | |||
| IC | Collector Current | 600 | mA | |||
| PC | Collector Power Dissipation | 300 | mW | |||
| RJA | Thermal Resistance From Junction To Ambient | 416 | /W | |||
| TJ,Tstg | Operation Junction and Storage Temperature Range | -55 | +150 | |||
| V(BR)CBO | Collector-base breakdown voltage | IC=100A, IE=0 | 180 | V | ||
| V(BR)CEO | Collector-emitter breakdown voltage | * IC=1mA, IB=0 | 160 | V | ||
| V(BR)EBO | Emitter-base breakdown voltage | IE=10A, IC=0 | 6 | V | ||
| ICBO | Collector cut-off current | VCB=120V, IE=0 | 50 | nA | ||
| IEBO | Emitter cut-off current | VEB=4V, IC=0 | 50 | nA | ||
| hFE(1) | DC current gain | * VCE=5V, IC=1mA | 80 | |||
| hFE(2) | DC current gain | * VCE=5V, IC=10mA | 100 | 300 | ||
| hFE(3) | DC current gain | * VCE=5V, IC=50mA | 50 | |||
| VCE(sat)1 | Collector-emitter saturation voltage | * IC=10mA, IB=1mA | 0.15 | V | ||
| VCE(sat)2 | Collector-emitter saturation voltage | * IC=50mA, IB=5mA | 0.2 | V | ||
| VBE(sat)1 | Base-emitter saturation voltage | * IC=10mA, IB=1mA | 1 | V | ||
| VBE(sat)2 | Base-emitter saturation voltage | * IC=50mA, IB=5mA | 1 | V | ||
| fT | Transition frequency | VCE=10V,IC=10mA, f=100MHz | 100 | 300 | MHz | |
| Cob | Collector output capacitance | VCB=10V, IE=0, f=1MHz | 6 | pF |
2410121553_XZT-MMBT5551_C5805824.pdf
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