High Density Cell N Channel MOSFET XDS TX50N06 with Low On Resistance and Effective Heat Dissipation
Key Attributes
Model Number:
TX50N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+175℃
RDS(on):
20mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
120pF@30V
Number:
1 N-channel
Output Capacitance(Coss):
158pF
Input Capacitance(Ciss):
2.05nF@30V
Pd - Power Dissipation:
85W
Gate Charge(Qg):
50nC@10V
Mfr. Part #:
TX50N06
Package:
TO-252
Product Description
Product Overview
The TX50N06 is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced technology is optimized to minimize on-state resistance, making these devices particularly suitable for low-voltage applications. Key advantages include ultra-low RDS(on) due to high-density cell design and excellent package performance for effective heat dissipation.
Product Attributes
- Brand: XDSSEMI
- Package Type: TO-252
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| STATIC | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1.4 | V | ||
| Gate-Body Leakage | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1 | A | ||
| Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=20A | 20 | m | ||
| Diode Forward Voltage | VSD | IS=20A, VGS=0V | 1.2 | V | ||
| DYNAMIC | ||||||
| Total Gate Charge | Qg | VDS=30V, VGS=10V, ID=20A | 50 | nC | ||
| Gate-Source Charge | Qgs | 6 | nC | |||
| Gate-Drain Charge | Qgd | nC | ||||
| Input Capacitance | Ciss | VDS=30V, VGS=0V, f=1MHz | 158 | pF | ||
| Output Capacitance | Coss | 120 | pF | |||
| Reverse Transfer Capacitance | Crss | 28.2 | pF | |||
| Turn-On Delay Time | td(on) | VDD =30V, RG=3 RL=6.7,VGS=10V, TJ = 25C, IF =20A | 15 | ns | ||
| Turn-On Rise Time | tr | 20 | ns | |||
| Turn-Off Delay Time | td(off) | 40 | ns | |||
| Turn-Off Fall Time | tf | 15 | ns | |||
| Reverse Recovery Time | trr | di/dt = 100A/s | 40 | nS | ||
| Reverse Recovery Charge | Qrr | 5.1 | nC | |||
| Parameter | Symbol | Ratings | Units |
| Maximum Ratings | |||
| Drain-Source Voltage | VDSS | 60 | V |
| Gate-Source Voltage | VGSS | 20 | V |
| Continuous Drain Current | ID | 50* (Tc=25) / 35.4* (Tc=100) | A |
| Pulsed Drain Current | IDM | 90 | A |
| Power Dissipation | PD | 85 (Tc=25) | W |
| Derate above 25 | 0.3 | W/ | |
| Single pulse avalanche energy | EAS | 245 (L=0.5mH, VDD=30V, RG=25,TJ=25) | mJ |
| Operating Junction and Storage Temperature Range | TJ,Tstg | -55~+175 | |
| Thermal Characteristics | |||
| Thermal resistance, case to sink | RthCS | 0.5 | /W |
| Thermal resistance junction to case | RthJC | 3.3 | /W |
| Thermal resistance junction to ambient | RthJA | 110 | /W |
2410122028_XDS-TX50N06_C448633.pdf
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