High Voltage N Channel MOSFET XYD X9N90DHA3 Designed for Cell Phone Chargers and LED Power Supplies
Key Attributes
Model Number:
X9N90DHA3
Product Custom Attributes
Mfr. Part #:
X9N90DHA3
Package:
TO-247-3L
Product Description
Product Overview
The X9N90DHA3 is an N-Channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. Designed for high-voltage applications, it features low gate charge, low Ciss, and fast switching capabilities. This MOSFET is suitable for use in LED power supplies, cell phone chargers, and standby power systems.
Product Attributes
- Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
- Origin: China
- Model: X9N90DHA3
- Package: TO-247-3L
- Packaging: Tube
Technical Specifications
| Parameter | Symbol | Values | Unit | Note/Test Conditions |
| Absolute Maximum Ratings | VDSS | 900 | V | |
| VGS | -30 to 30 | V | ||
| ID | 9 | A | TC=25 | |
| IDM | 36 | A | ||
| EAS | 405 | mJ | L=10mH,VD=50V, TC=25 | |
| PD | 416 | W | TC=25 | |
| PD | 3.2 | W | TA=25 | |
| Tj,TSTG | -55 to 150 | |||
| Rth(J-c) | 0.31 | /W | ||
| Rth(J-a) | 39 | /W | ||
| Electrical Characteristics | BVDSS | 900 | V | VGS=0V,ID=250A |
| IDSS | 1 | A | VDS=900V,VGS=0V | |
| IGSSF | 100 | nA | VGS=30V,VDS=0V | |
| IGSSR | -100 | nA | VGS=-30V,VDS=0V | |
| VGS(th) | 2 to 4 | V | VDS=VGS,ID=250A | |
| RDS(on) | 1.2 | VGS=10V,ID=4.5A | ||
| Rg | 1 | VGS=0V, VDS=0V, f=1MHz | ||
| gfs | 10 | S | VDS=20V,ID=4.5A | |
| Ciss | 2900 | pF | VDS=25V,VGS=0V,f=1.0MHZ | |
| Dynamic Characteristics | Coss | 191 | pF | |
| Crss | 8 | pF | ||
| td(on) | 19 | ns | VDD=450V ,RG=4.7 ID=4A,VGS=10V | |
| Gate Charge Characteristics | tr | 7 | ns | |
| td(off) | 38 | ns | ||
| tf | 44 | ns | ||
| Qg | 61 | nC | VDS=450V,ID=9A,VGS=10V | |
| Reverse Diode | Qgs | 16 | nC | |
| Qgd | 13 | nC | ||
| IS | 9 | A | ||
| ISM | 36 | A | ||
| Diode Characteristics | VSD | 1.2 | V | IS=4.5A,VGS=0V |
| trr | 729 | ns | VGS=0V,Is=9A di/dt=100A/s | |
| Qrr | 7300 | nC |
2509251450_XYD-X9N90DHA3_C51952966.pdf
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