power management using XYD X14N030TLE2 N Channel MOSFET with low Ciss and fast switching capabilities
Key Attributes
Model Number:
X14N030TLE2
Product Custom Attributes
Mfr. Part #:
X14N030TLE2
Package:
TO-252-2L
Product Description
Product Overview
The X14N030TLE2 is an N-Channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features extremely low on-resistance, fast switching, excellent low Ciss, and low gate charge, making it suitable for applications such as synchronous rectification for AC/DC quick chargers, battery management, and Uninterrupible Power Supplies (UPS).
Product Attributes
- Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
- Product Name: X14N030TLE2
- Package: TO-252-2L
- Ordering Code: X14N030TLE2
- Marking: X14N030TLE2
Technical Specifications
| Parameter | Symbol | Min | Typ | Max | Unit | Note/Test Conditions |
| Absolute Maximum Ratings | VDSS | - | - | 30 | V | - |
| VGS | -20 | - | 20 | V | - | |
| ID (TC=25) | - | - | 47 | A | TC=25 | |
| ID (TC=100) | - | - | 29 | A | TC=100 | |
| IDM | - | - | 188 | A | - | |
| EAS | - | - | 52 | mJ | L=0.5mH,VD=24V, TC=25 | |
| Power Dissipation | PD (TC=25) | - | - | 52 | W | TC=25 |
| PD (TA=25) | - | - | 2.7 | W | TA=25 | |
| Tj,TSTG | -50 | - | 150 | - | ||
| Thermal Characteristics | Rth(J-c) | - | 2.4 | - | /W | - |
| Rth(J-A) | - | 45 | - | /W | - | |
| Electrical Characteristics | BVDSS | 30 | - | - | V | VGS=0V,ID=250A |
| IDSS | - | - | 1 | A | VDS=30V,VGS=0V | |
| IGSSF | - | - | 100 | nA | VGS=20V,VDS=0V | |
| IGSSR | - | - | -100 | nA | VGS=-20V,VDS=0V | |
| VGS(th) | 1.0 | - | 2.4 | V | VDS=VGS,ID=250A | |
| RDS(on) (VGS=10V,ID=20A) | - | 10 | 14 | m | VGS=10V,ID=20A | |
| RDS(on) (VGS=4.5V,ID=10A) | - | 15 | 21 | m | VGS=4.5V,ID=10A | |
| Dynamic Characteristics | Ciss | - | 843 | - | pF | VDS=25V,VGS=0V,f=1.0MHZ |
| Coss | - | 105 | - | pF | - | |
| Crss | - | 79 | - | pF | - | |
| Switching Characteristics | td(on) | - | 6 | - | ns | VDD=15V,RG=10,VGS=10V,ID=20A |
| tr | - | 88 | - | ns | - | |
| td(off) | - | 30 | - | ns | - | |
| tf | - | 12 | - | ns | - | |
| Gate Charge Characteristics | Qg | - | 17 | - | nC | VDS=24V,ID=20A,VGS=10V |
| Qgs | - | 4 | - | nC | - | |
| Qgd | - | 3 | - | nC | - | |
| Reverse Diode Characteristics | IS | - | - | 47 | A | - |
| ISM | - | - | 188 | A | - | |
| VSD | - | - | 1.2 | V | IS=20A,VGS=0V | |
| Reverse Recovery | trr | - | 38 | - | ns | VGS=0V,IS=3A di/dt=100A/s |
| Reverse Recovery Charge | Qrr | - | 4 | - | nC | - |
2509251450_XYD-X14N030TLE2_C51952866.pdf
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