N Channel SMD MOSFET XZT 2N7002K Ultra Low On Resistance for Voltage Controlled Switching Applications
Key Attributes
Model Number:
2N7002K
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.3Ω@4.5V,200A
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF@10V
Number:
1 N-channel
Output Capacitance(Coss):
30pF
Input Capacitance(Ciss):
40pF@10V
Pd - Power Dissipation:
350mW
Mfr. Part #:
2N7002K
Package:
SOT-23
Product Description
Product Overview
The XT ELECTRONICS 2N7002K is an N-Channel SMD MOSFET designed for voltage-controlled small signal switching. It features a high-density cell design for ultra-low on-resistance, offering a rugged and reliable solution with high saturation current capability. This ESD-protected MOSFET is ideal for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: XT ELECTRONICS
- Product Code: 2N7002K
- Package Type: SOT-23
- Marking: 72K
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | 340 | mA | |||
| Power Dissipation | PD | 350 | mW | |||
| Thermal Resistance from Junction to Ambient | RθJA | 357 | ℃/W | |||
| Junction Temperature | TJ | 150 | ℃ | |||
| Storage Temperature | TSTG | -55 | +150 | ℃ | ||
| Electrical Characteristics | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250µA | 60 | V | ||
| Zero gate voltage drain current | IDSS | VDS =48V,VGS = 0V | 1 | µA | ||
| Gate-body leakage current | IGSS | VGS =±20V, VDS = 0V | ±10 | µA | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =1mA | 1.0 | 2.5 | V | |
| Drain-source on-resistance | RDS(on) | VGS =10V, ID =500mA | 0.9 | 5 | Ω | |
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =200mA | 1.1 | 5.3 | Ω | |
| Dynamic Characteristics | ||||||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 40 | pF | ||
| Output Capacitance | Coss | VDS =10V,VGS =0V,f =1MHz | 30 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | 10 | pF | ||
| Turn-on delay time | td(on) | VDD=50V,VGS=10V, RL=250Ω,RGEN=50Ω | 10 | nS | ||
| Turn-off delay time | td(off) | VDD=50V,VGS=10V, RL=250Ω,RGEN=50Ω | 15 | nS | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward voltage | VSD | VGS =0V, IS=0.3A | 1.5 | V | ||
2410121753_XZT-2N7002K_C5805791.pdf
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