Small signal dual NPN transistor YANGJIE MMDT3904Q with automotive grade AEC Q101 and RoHS compliance
Key Attributes
Model Number:
MMDT3904Q
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
DC Current Gain:
300@10mA,1V
Transition Frequency(fT):
300MHz
Vce Saturation(VCE(sat)):
300mV@50mA,5mA
Type:
NPN
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMDT3904Q
Package:
SOT-363
Product Description
Product Overview
The MMDT3904Q is a dual NPN small signal transistor designed for surface mount applications. It features an epoxy casing that meets UL-94 V-0 flammability rating and is moisture sensitivity level 1. The "Q" suffix indicates AEC-Q101 qualification, making it suitable for automotive electronics.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China (implied by company location)
- Certifications: AEC-Q101 qualified (for suffix "Q"), RoHS compliant
- Flammability Rating: UL-94 V-0
- Moisture Sensitivity Level: 1
- Package: SOT-363
- Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102
- Marking: K6N
Technical Specifications
| Item | Symbol | Unit | Conditions | Value |
| Collector-Emitter Voltage | VCEO | V | IC=1mAdc, IB=0 | 40 |
| Collector-Base Voltage | VCBO | V | IC=10uAdc, IE=0 | 60 |
| Emitter-Base Voltage | VEBO | V | IE=10uAdc, IC=0 | 6 |
| Collector Current | IC | mA | 200 | |
| Collector Power Dissipation | PC | mW | Device mounted on FR-4 PCB 1.0 x 1.0 x 0.06 inch | 200 |
| Junction Temperature | Tj | -55 to +150 | ||
| Storage Temperature | Tstg | -55 to +150 | ||
| Collector-base breakdown voltage | VCBO | V | IC=10A,IE=0 | 60 |
| Collector-emitter breakdown voltage | VCEO | V | IC =1mA,IB=0 | 40 |
| Emitter-base breakdown voltage | VEBO | V | IE=10A,IC=0 | 6 |
| Collector-Base cut-off current | ICBO | nA | VCB=30V,IE=0 | 50 |
| Collector-Emitter cut-off current | ICEO | nA | VCE=30V,IB=0 | 50 |
| Emitter-Base Cut-off current | IEBO | nA | VEB=5V,IC=0 | 50 |
| DC current gain | hFE(1) | VCE=1V,IC=10mA | 100-300 | |
| DC current gain | hFE(2) | VCE=1V,IC=50mA | 60 | |
| Collector-emitter saturation voltage | VCE(sat) | V | IC=10mA,IB=1mA | 0.2 |
| Collector-emitter saturation voltage | VCE(sat) | V | IC=50mA,IB=5mA | 0.3 |
| Baser-emitter saturation voltage | VBE(sat) | V | IC=10mA,IB=1mA | 0.65-0.85 |
| Baser-emitter saturation voltage | VBE(sat) | V | IC=50mA,IB=5mA | 0.95 |
| Collector-base Output Capacitance | Cobo | pF | VCB=5.0Vdc, f=1.0MHz, IE=0 | 4 |
| Transition frequency | fT | MHz | VCE=20V,IC=10mA,f=100MHz | 300 |
| Noise figure | NF | dB | VCE=5V,Ic=0.1mA, f=1kHz,Rg=1K | 5 |
2411071802_YANGJIE-MMDT3904Q_C20168699.pdf
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