SOT-23 Package NPN Transistor XZT 2SC1623 with High Voltage and Current Gain Characteristics

Key Attributes
Model Number: 2SC1623
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
DC Current Gain:
300@1mA,6V
Vce Saturation(VCE(sat)):
300mV@100mA,10mA
Type:
NPN
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
50V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SC1623
Package:
SOT-23
Product Description

Product Overview

The 2SC1623 is an NPN transistor designed for general-purpose applications. It features high DC current gain (hFE=200 Typ) and high voltage capability (VCEO=50V), making it suitable for various electronic circuits. The transistor is housed in a compact SOT-23 package.

Product Attributes

  • Brand: X T ELECTRONICS
  • Model: 2SC1623
  • Package: SOT-23
  • Transistor Type: NPN
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Collector-Base VoltageVCBO60V
Collector-Emitter VoltageVCEO50V
Emitter-Base VoltageVEBO5V
Collector CurrentIC100mA
Collector Power DissipationPC200mW
Thermal Resistance Junction To AmbientRJA625/W
Operation Junction and Storage Temperature RangeTJ,Tstg-55+150
Collector-base breakdown voltageV(BR)CBOIC=100A,IE=060V
Collector-emitter breakdown voltageV(BR)CEOIC=1mA,IB=050V
Emitter-base breakdown voltageV(BR)EBOIE=100A,IC=05V
Collector cut-off currentICBOVCB=60V,IE=00.1A
Emitter cut-off currentIEBOVEB=5V,IC=00.1A
DC current gainhFEVCE=6V,IC=1mA90200600
Collector-emitter saturation voltageVCE(sat)IC=100mA,IB=10mA0.3V
Base-emitter saturation voltageVBE(sat)IC=100mA,IB=10mA1V
Transition frequencyfTVCE=6V,IC=10mA250MHz

2410121553_XZT-2SC1623_C5805792.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.