86--136 6733 2386
quality Surface Mounted Diode WEIDA SS36C with High Forward Surge Capability and Halogen Free Green Compound factory
quality Surface Mounted Diode WEIDA SS36C with High Forward Surge Capability and Halogen Free Green Compound factory

Surface Mounted Diode WEIDA SS36C with High Forward Surge Capability and Halogen Free Green Compound

Key Attributes
Model Number: SS36C
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
100A
Operating Junction Temperature Range:
-55℃~+150℃
Voltage - DC Reverse (Vr) (Max):
60V
Diode Configuration:
1 Independent
Reverse Leakage Current (Ir):
500uA@60V
Voltage - Forward(Vf@If):
700mV@3A
Current - Rectified:
3A
Mfr. Part #:
SS36C
Package:
SMC
Product Description

Product Overview

Surface Mounted Schottky Barrier Rectifiers (SS32-SS320 series) designed for a wide range of applications requiring efficient rectification. These diodes offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering performance. They are RoHS compliant, with green compound options available.

Product Attributes

  • Brand: Jiangsu Weida Semiconductor Co., Ltd.
  • Case: DO-214AB Molded plastic
  • Material: Epoxy, UL 94V-0 rate flame retardant
  • Lead: Pure tin plated, lead free
  • Color: Green compound (with suffix "-F" marking for halogen-free)
  • Certifications: RoHS standard compliant

Technical Specifications

ParameterSymbolSS32SS33SS34SS35SS36SS38SS310SS315SS320Unit
Maximum repetitive peak reverse voltageVRRM203040506080100150200V
Maximum RMS voltageVRMS14212835425670105140V
Maximum DC blocking voltageVDC203040506080100150200V
Maximum average forward rectified currentIF(AV)3.0A
Non-repetitive peak forward surge current 8.3 ms single half sine waveIFSM100A
Maximum forward voltage @IF=3.0AVF0.550.700.850.95V
Maximum reverse current @VDC TA= 25IR0.50.1mA
Maximum reverse current TA= 100IR2010mA
Typical thermal resistance (Note 1)RJA60/W
Typical thermal resistance (Note 1)RJL15/W
Type junction capacitance VR=4.0V,f=1MHzCJ180pF
Operating junction temperatureTJ -55 --- +125
Storage temperature rangeTSTG -55 --- +150

Note: 1) Thermal resistance from junction to ambient, PCB mounted.


2410121519_WEIDA-SS36C_C2915228.pdf

Related Products
quality digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free factory
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
quality N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology factory
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
quality complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities factory
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
quality power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching factory
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.