High dvdt sensitive scr semiconductor device WEIDA 2P4M suitable for residual current circuit breakers
Key Attributes
Model Number:
2P4M
Product Custom Attributes
Holding Current (Ih):
5mA
Current - Gate Trigger(Igt):
200uA
Voltage - On State(Vtm):
1.5V
Average Gate Power Dissipation (PG(AV)):
100mW
Current - On State(It(RMS)):
4A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
20A
SCR Type:
1 SCR
Operating Temperature:
-40℃~+110℃
Gate Trigger Voltage (Vgt):
800mV
Mfr. Part #:
2P4M
Package:
TO-252
Product Description
Product Overview
The Jiangsu Weida Semiconductor 2P4M 2A Sensitive SCR series offers high dv/dt rates and strong resistance to electromagnetic interference. These SCRs are particularly recommended for applications such as residual current circuit breakers, hair straighteners, and igniters.
Product Attributes
- Brand: Jiangsu Weida Semiconductor
- Product Series: 2P4M 2A Sensitive SCRs
- Origin: China
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition | Package Type |
| Storage junction temperature range | Tstg | -40~150 | All | ||
| Operating junction temperature range | Tj | -40~110 | All | ||
| Repetitive peak off-state voltage | VDRM | 600 | V | Tj=25 | All |
| Repetitive peak reverse voltage | VRRM | 600 | V | Tj=25 | All |
| RMS on-state current | IT(RMS) | 2 | A | All | |
| Non repetitive surge peak on-state current | ITSM | 20 | A | full cycle, F=50Hz | All |
| I2t value for fusing | I2t | 2 | A2s | tp=10ms | All |
| Critical rate of rise of on-state current | dI/dt | 50 | A/s | IG=2IGT | All |
| Peak gate current | IGM | 0.2 | A | All | |
| Average gate power dissipation | PG(AV) | 0.1 | W | All | |
| Peak gate power | PGM | 0.5 | W | All | |
| Gate trigger current | IGT | 200 | A | VD=12V, RL=33 | All |
| Gate trigger voltage | VGT | 0.6 - 0.8 | V | All | |
| Gate-non-trigger voltage | VGD | 0.2 | V | VD=VDRM Tj=110 | All |
| Holding current | IH | 6 | mA | IT=50mA | All |
| Latching current | IL | 6 | mA | IG=1.2IGT | All |
| Critical rate of rise of off-state voltage | dV/dt | 20 | V/s | VD=2/3VDRM Tj=110RGK=1K | All |
| On-state voltage | VTM | 1.5 | V | ITM=4A tp=380s Tj=25 | All |
| Leakage current | IDRM/IRRM | 5 | A | VD=VDRM= VRRM RGK=1K Tj=25 | All |
| Leakage current | IDRM/IRRM | 0.1 | mA | VD=VDRM= VRRM RGK=1K Tj=110 | All |
| Junction to case thermal resistance | Rth(j-c) | 6.5 | /W | AC, TO-251-4R/TO-252-4R | TO-251-4R/TO-252-4R |
| Junction to case thermal resistance | Rth(j-c) | 10 | /W | AC, TO-92 | TO-92 |
| Junction to case thermal resistance | Rth(j-c) | 7.0 | /W | AC, TO-126 | TO-126 |
| Junction to case thermal resistance | Rth(j-c) | 8.3 | /W | AC, SOT-89-3L | SOT-89-3L |
| Junction to case thermal resistance | Rth(j-c) | 7.3 | /W | AC, SOT-223-3L | SOT-223-3L |
2410122027_WEIDA-2P4M_C2901044.pdf
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