Switching Amplifier YANGJIE MMST4403Q PNP Type with UL 94 V0 Rated Epoxy Casing and Tin Plated Leads
Key Attributes
Model Number:
MMST4403Q
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
DC Current Gain:
300@150mA,2V
Transition Frequency(fT):
200MHz
Type:
PNP
Vce Saturation(VCE(sat)):
750mV@500mA,50mA
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMST4403Q
Package:
SOT-323
Product Description
Product Overview
The MMST4403Q is a PNP general-purpose amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It is designed for switching and linear amplification applications, offering high conductance and AEC-Q101 qualification. The device features an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China (implied by company name and website)
- Certifications: RoHS, AEC-Q101 Qualified
- Flammability Rating: UL-94 V-0
- Moisture Sensitivity Level: 1
- Material: Epoxy (casing), Tin plated leads
- Color: Black (body)
Technical Specifications
| Item | Symbol | Unit | Conditions | Min | Max |
| Maximum Ratings | VCBO | V | -40 | ||
| VCEO | V | -40 | |||
| VEBO | V | -5 | |||
| IC (Continuous) | mA | -600 | |||
| PD (Total Device Dissipation) (*) | mW | Ta=25 | 200 | ||
| RthJA (Thermal Resistance Junction to Ambient) (*) | K/W | 625 | |||
| Tj (Junction Temperature) | -55 | +150 | |||
| TSTG (Storage Temperature) | -55 | +150 | |||
| Electrical Characteristics | V(BR)CEO (Collector-emitter breakdown voltage) | V | IC =-1mA,IB=0 | -40 | |
| V(BR)CBO (Collector-base breakdown voltage) | V | IC=-100uA,IE=0 | -40 | ||
| V(BR)EBO (Emitter-base breakdown voltage) | V | IE=-100A,IC=0 | -5 | ||
| ICBO (Collector cut-off current) | nA | VCB=-35V, IE=0 | -100 | ||
| ICEO (Base cut-off current) | nA | VCE=-35V,IB =0 | -100 | ||
| IEBO (Collector cut-off current) | nA | VEB=-4V, IC=0 | -100 | ||
| hFE (DC current gain) | VCE=-2V,IC=-150mA | 100 | 300 | ||
| hFE (DC current gain) | VCE=-2V,IC=-500mA | 20 | |||
| VCE(sat) (Collector-emitter saturation voltage) | V | IC=-150mA,IB=-15mA | -0.4 | ||
| VCE(sat) (Collector-emitter saturation voltage) | V | IC=-500mA,IB=-50mA | -0.75 | ||
| VBE(sat) (Base-emitter saturation voltage) | V | IC=-150mA,IB=-15mA | -0.75 | -0.95 | |
| VBE(sat) (Base-emitter saturation voltage) | V | IC=-500mA,IB=-50mA | -1.3 | ||
| fT (Transition frequency) | MHz | VCE=-10V,IC=-20mA,f=100MHz | 200 | ||
| td (Delay time) | ns | VCC=-3V, VEB=-2V IC=-150mA,IB1=-15mA | 15 | ||
| tr (Rise time) | ns | 20 | |||
| ts (Storage time) | ns | VCC=-3V, IC=-150mA,IB1=IB2=-15mA | 225 | ||
| tf (Fall time) | ns | 30 |
2411071802_YANGJIE-MMST4403Q_C20168706.pdf
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