NPN Transistor YANGJIE MMBTA42Q with High Voltage Capability and Automotive Electronics Qualification
Key Attributes
Model Number:
MMBTA42Q
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
500nA
Transition Frequency(fT):
50MHz
Type:
NPN
Vce Saturation(VCE(sat)):
500mV@20mA,2mA
Pd - Power Dissipation:
350mW
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
300V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBTA42Q
Package:
SOT-23
Product Description
Product Overview
The MMBTA42Q is an NPN High Voltage Transistor designed for general-purpose amplification. It features high conductance and high voltage capabilities, housed in a SOT-23 package. The epoxy meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. The 'Q' suffix indicates AEC-Q101 qualification, making it suitable for automotive electronics.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: Yangzhou
- Certifications: RoHS, AEC-Q101 qualified
- Flammability Rating: UL-94 V-0
- Moisture Sensitivity Level: 1
- Halogen Free: Yes
Technical Specifications
| Item | Symbol | Unit | Conditions | Min | Typ | Max |
| Collector-Base Voltage | VCBO | V | 300 | |||
| Collector-Emitter Voltage | VCEO | V | 300 | |||
| Emitter-Base Voltage | VEBO | V | 5 | |||
| Collector Current - Continuous | IC | mA | 500 | |||
| Total Device Dissipation | PD | mW | Ta=25 | 350 | ||
| Junction Temperature | Tj | -55 | +150 | |||
| Storage Temperature | TSTG | -55 | +150 | |||
| Collector-base breakdown voltage | VCBO | V | IC= 100uA, IE=0 | 300 | ||
| Collector-emitter breakdown voltage | VCEO | V | IC= 1mA, IB=0 | 300 | ||
| Emitter-base breakdown voltage | VEBO | V | IE= 100uA, IC=0 | 5 | ||
| Collector-base cut-off current | ICBO | uA | VCB=200V, IE =0 | 0.5 | ||
| Emitter-base cut-off current | IEBO | uA | VEB=5 V, IC=0 | 0.5 | ||
| DC current gain | hFE | VCE= 10V, IC= 1mA | 25 | |||
| DC current gain | hFE | VCE= 10V, IC=10mA | 40 | 300 | ||
| DC current gain | hFE | VCE=10V, IC=30mA | 40 | |||
| Collector-emitter saturation voltage | VCE(sat) | V | IC=20mA, IB= 2mA | 0.5 | ||
| Base-emitter saturation voltage | VBE(sat) | V | IC=20mA, IB= 2mA | 1.0 | ||
| Transition frequency | fT | MHz | VCE=20V,IC=10mA,f=30MHz | 50 |
2411071802_YANGJIE-MMBTA42Q_C20168696.pdf
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