PNP General Purpose Amplifier YANGJIE S8550-L RoHS Compliant Epoxy UL94 V0 Flame Retardant Device
Key Attributes
Model Number:
S8550-L
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
DC Current Gain:
350@50mA,1V
Transition Frequency(fT):
150MHz
Type:
PNP
Number:
1 PNP
Vce Saturation(VCE(sat)):
600mV@500mA,50mA
Pd - Power Dissipation:
300mW
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Mfr. Part #:
S8550-L
Package:
SOT-23(TO-236)
Product Description
Product Overview
The S8550-L thru S8550-H series are PNP general-purpose amplifiers compliant with RoHS standards. These devices are designed for general amplification applications and feature epoxy that meets UL-94 V-0 flammability rating. Halogen-free options are available upon request. They have a Moisture Sensitivity Level of 1.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China
- Certifications: RoHS Compliant
Technical Specifications
| Item | Symbol | Unit | Conditions | Value | S8550-L | S8550-H |
|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | V | IC=-100uAdc, IE=0 | -40 | ||
| Collector-Emitter Voltage | VCEO | V | IC=-100uAdc, IB=0 | -25 | ||
| Emitter-Base Voltage | VEBO | V | IE=-100uAdc, IC=0 | -5 | ||
| Collector Current | IC | mA | -500 | |||
| Collector Power Dissipation | PC | mW | 300 | |||
| Thermal Resistance Junction To Ambient | RJA | /W | 417 | |||
| Operation Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 to +150 | ||||
| Collector-Base Breakdown Voltage | VCBO | V | IC=-100uA,IE=0 | -40 | ||
| Collector-Emitter Breakdown Voltage | VCEO | V | IC =-100uA,IB=0 | -25 | ||
| Emitter-Base Breakdown Voltage | VEBO | V | IE=-100A,IC=0 | -5 | ||
| Collector-Emitter Cut-off Current | ICEX | nA | VCE=-20V, VBE=-3V | -100 | ||
| Collector-Base Cut-off Current | ICBO | nA | VCB=-40V, IE=0 | -100 | ||
| Emitter-Base Cut-off Current | IEBO | nA | VEB=-5V, IC =0 | -100 | ||
| DC Current Gain | hFE1 | VCE=-1V,IC=-50mA | 120-350 | 120-200 | 200-350 | |
| DC Current Gain | hFE2 | VCE=-1V,IC=-500mA | 50 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | V | IC=-500mA,IB=-50mA | -0.6 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | V | IC=-500mA,IB=-50mA | -1.2 | ||
| Transition Frequency | fT | MHz | VCE=-6V,IC=-20mA,f=30MHz | 150 |
2401111800_YANGJIE-S8550-L_C20603263.pdf
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