N Channel MOSFET YANGJIE YJG110G10B Designed for Uninterruptible Power Supplies and DC DC Converters
Key Attributes
Model Number:
YJG110G10B
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
110A
RDS(on):
4mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
30pF
Number:
1 N-channel
Pd - Power Dissipation:
113W
Output Capacitance(Coss):
1.6nF
Input Capacitance(Ciss):
4.3nF
Gate Charge(Qg):
55nC@10V
Mfr. Part #:
YJG110G10B
Package:
PDFN5060-8L
Product Description
Product Overview
The YJG110G10B is a N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology with a high-density cell design for low RDS(ON) and excellent heat dissipation. This transistor is suitable for power switching applications, uninterruptible power supplies, and DC-DC converters. It is 100% EAS and VDS tested, moisture sensitivity level 1, and meets UL 94 V-0 flammability rating, being Halogen Free.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Model: YJG110G10B
- Certifications: RoHS Compliant, UL 94 V-0 Flammability Rating, Halogen Free
- Technology: Split gate trench MOSFET
- Moisture Sensitivity Level: 1
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 100 | V | |||
| Gate-source Voltage | VGS | ±20 | V | |||
| Drain Current | ID | TA=25℃ | 15 | A | ||
| TA=100℃ | 9.5 | A | ||||
| Drain Current | ID | TC=25℃ | 110 | A | ||
| TC =100℃ | 70 | A | ||||
| Pulsed Drain Current | IDM | 440 | A | |||
| Avalanche energy | EAS | TJ=25℃, VDD=50V, VG=10V, RG=25℃, L=2mH, IAS=20A. | 400 | mJ | ||
| Total Power Dissipation | PD | TA=25℃ | 2.4 | W | ||
| TA=100℃ | 0.9 | W | ||||
| Total Power Dissipation | PD | TC=25℃ | 113 | W | ||
| TC =100℃ | 45 | W | ||||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | ℃ | ||
| Thermal resistance | ||||||
| Thermal Resistance Junction-to-Ambient | RθJA | Steady-State | 42 | 53 | ℃/W | |
| Thermal Resistance Junction-to-Case | RθJC | Steady-State | 0.88 | 1.1 | ℃/W | |
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250µA | 100 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V | - | 1 | µA | |
| Zero Gate Voltage Drain Current | IDSS | VDS=100V, VGS=0V, Tj=150℃ | - | 100 | µA | |
| Gate-Body Leakage Current | IGSS | VGS= ±20V, VDS=0V | - | ±100 | nA | |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250µA | 2 | 3 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=55A | 4 | 5 | mΩ | |
| VGS=10V, ID=20A | 4 | 5 | ||||
| VGS=6V, ID=20A | 5.2 | 6.5 | ||||
| Diode Forward Voltage | VSD | IS=55A, VGS=0V | 0.8 | 1.2 | V | |
| Gate resistance | RG | f=1MHz | 0.8 | - | Ω | |
| Maximum Body-Diode Continuous Current | IS | - | 110 | A | ||
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=50V, VGS=0V, f=1MHz | 4300 | - | pF | |
| Output Capacitance | Coss | 1600 | - | |||
| Reverse Transfer Capacitance | Crss | 30 | - | |||
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=10V, VDS=50V, ID=55A | 55 | - | nC | |
| Gate-Source Charge | Qgs | 16 | - | |||
| Gate-Drain Charge | Qg | 14 | - | |||
| Reverse Recovery Charge | Qrr | IF=55A, di/dt=350A/us | 165 | - | nC | |
| Reverse Recovery Time | trr | 47 | - | ns | ||
| Turn-on Delay Time | tD(on) | VGS=10V, VDD=50V, ID=55A RGEN=2.2Ω | 24 | - | ns | |
| Turn-on Rise Time | tr | 125 | - | |||
| Turn-off Delay Time | tD(off) | 30 | - | |||
| Turn-off fall Time | tf | 8 | - | |||
2411081727_YANGJIE-YJG110G10B_C20605750.pdf
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