Power electronics IGBT module YANGJIE MG75P12E2 featuring Trench technology and fast recovery diode
Key Attributes
Model Number:
MG75P12E2
Product Custom Attributes
Pd - Power Dissipation:
476W
Td(off):
380ns
Td(on):
100ns
Operating Temperature:
-40℃~+150℃
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.3nF
Input Capacitance(Cies):
4nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.8V@2.6mA
Gate Charge(Qg):
0.78uC
Pulsed Current- Forward(Ifm):
150A
Switching Energy(Eoff):
3.6mJ
Turn-On Energy (Eon):
5.6mJ
Mfr. Part #:
MG75P12E2
Package:
E2
Product Description
Product Overview
The MG75P12E2 S-M332 is a high-performance IGBT module designed for power electronics applications. It features low Vce(sat) with Trench technology, a positive temperature coefficient for Vce(sat), and an integrated fast & soft recovery anti-parallel diode. The module boasts a low inductance case, high short circuit capability, and a maximum junction temperature of 175, making it suitable for motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS).
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: RoHS COMPLIANT
Technical Specifications
| Module Type | Parameter | Conditions | Value Unit | Min. | Typ. | Max. |
| IGBT-inverter | VCES | VGE=0V, IC =1mA, Tvj=25 | V | 1200 | ||
| IC | Tc=100, Tvjmax=175 | A | 75 | |||
| ICRM | tp=1ms | A | 150 | |||
| VGES | Tvj=25 | V | 20 | |||
| Ptot | Tc=25,Tvjmax=175 | W | 476 | |||
| VGE(th) | VGE=VCE, IC =2.6mA,Tvj=25 | V | 5.8 | 6.5 | 7.2 | |
| ICES | VCE=1200V,VGE=0V, Tvj=25 | mA | 1.0 | |||
| VCE(sat) | Ic=75A,VGE=15V, Tvj=25 | V | 1.85 | 2.15 | ||
| VCE(sat) | Ic=75A,VGE=15V, Tvj=125 | V | 2.05 | |||
| VCE(sat) | Ic=75A,VGE=15V, Tvj=150 | V | 2.10 | |||
| QG | uC | 0.78 | ||||
| Cies | VCE=25V,VGE =0V, f=1MHz, Tvj=25 | nF | 4.00 | |||
| Diode-inverter | VRRM | Tvj=25 | V | 1200 | ||
| IF | A | 75 | ||||
| IFRM | tp=1ms | A | 150 | |||
| VF | IF=75A,Tvj=25 | V | 2.00 | 2.30 | ||
| VF | IF=75A,Tvj=125 | V | 2.10 | |||
| VF | IF=75A,Tvj=150 | V | 2.15 | |||
| Qrr | IF =75 A, VR=600V, -diF/dt =900A/us, Tvj=25 | uC | 4.2 | |||
| IGBT-brake-chopper | VCES | VGE=0V, IC =1mA, Tvj=25 | V | 1200 | ||
| IC | Tc=100,Tvjmax=175 | A | 40 | |||
| ICRM | tp=1ms | A | 80 | |||
| VGES | Tvj=25 | V | 20 | |||
| Ptot | Tc=25, Tvjmax=175 | W | 300 | |||
| VGE(th) | VGE=VCE, IC =1.2mA,Tvj=25 | V | 5.8 | 6.7 | 7.2 | |
| ICES | VCE=1200V,VGE=0V, Tvj=25 | mA | 1.0 | |||
| VCE(sat) | Ic=40A,VGE=15V, Tvj=25 | V | 1.95 | 2.35 | ||
| VCE(sat) | Ic=40A,VGE=15V, Tvj=125 | V | 2.30 | |||
| VCE(sat) | Ic=40A,VGE=15V, Tvj=150 | V | 2.40 | |||
| QG | uC | 0.27 | ||||
| Cies | VCE=25V,VGE =0V, f=1MHz, Tvj=25 | nF | 2.00 | |||
| Diode-Brake-Chopper | VRRM | Tj=25 | V | 1200 | ||
| IF | A | 40 | ||||
| IFRM | tp=1ms | A | 80 | |||
| I2t | VR=0,tp=10ms,Tj=125 | A2s | 240 | |||
| I2t | VR=0,tp=10ms,Tj=150 | A2s | 220 | |||
| VF | IF=40A,Tvj=25 | V | 1.75 | 2.25 | ||
| VF | IF=40A,Tvj=125 | V | 1.75 | |||
| Diode-Rectifier | VRRM | Tj=25 | V | 1600 | ||
| IF(AV) | 50/60Hz, sine wave, Tc=80 | A | 80 | |||
| IRMSM | Tc=80 | A | 120 | |||
| IFSM | VR=0,tp=10ms,Tj=45 | A | 1100 | |||
| I2t | VR=0,tp=10ms,Tj=45 | A2s | 6050 | |||
| NTC-Thermistor | R25 | k | 5.0 | |||
| R/R | TC=100,R100=493.3 | % | -5 | 5 | ||
| P25 | mW | 20.0 | ||||
| B-value | B25/50 | K | 3375 | |||
| Module Characteristics | Visol | t=1min,f=50Hz | V | 2500 | ||
| Tjmax | Inverter, brake | 175 | ||||
| Tjmax | rectifier | 150 | ||||
| Tvj op | -40 | 150 | ||||
| Tstg | -40 | 125 | ||||
| LCE | nH | 60 | ||||
| Rjc | per IGBT-inverter | K/W | 0.315 | |||
| Rjc | per Diode-inverter | K/W | 0.620 | |||
| RCS | per IGBT-inverter | K/W | 0.118 | |||
| RCS | per Diode-inverter | K/W | 0.205 |
2411220036_YANGJIE-MG75P12E2_C781198.pdf
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