Super Junction MOSFET WUXI UNIGROUP MICRO TPA50R400C with Low Gate Charge and High Avalanche Energy

Key Attributes
Model Number: TPA50R400C
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
360mΩ@10V,3A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
4pF@50V
Number:
1 N-channel
Input Capacitance(Ciss):
587pF
Pd - Power Dissipation:
28W
Gate Charge(Qg):
14.5nC@10V
Mfr. Part #:
TPA50R400C
Package:
TO-220F-3
Product Description

Wuxi Unigroup Super-Junction Power MOSFETs

The TPP50R400C series of Super-Junction Power MOSFETs from Wuxi Unigroup Microelectronics Company offers very low FOM (RDS(on)Qg) and 100% avalanche tested performance. These RoHS compliant devices are ideal for Switch Mode Power Supply (SMPS), Uninterruptible Power Supply (UPS), and Power Factor Correction (PFC) applications.

Product Attributes

  • Brand: Wuxi Unigroup Microelectronics Company
  • Certifications: RoHS compliant

Technical Specifications

DevicePackageMarkingVDSS (V)ID (A)RDS(on) Typ. ()Qg Typ. (nC)EAS (mJ)
TPP50R400CTO-22050R400C50070.3614.5162
TPA50R400CTO-220F50R400C50070.3614.5162
TPU50R400CTO-25150R400C50070.3614.5162
TPD50R400CTO-25250R400C50070.3614.5162
TPC50R400CTO-26250R400C50070.3614.5162
TPB50R400CTO-26350R400C50070.3614.5162

2411221125_WUXI-UNIGROUP-MICRO-TPA50R400C_C2686301.pdf

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