High reliability P channel MOSFET XCH XCH2309 suitable for various fast switching power applications
Key Attributes
Model Number:
XCH2309
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
160mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
15pF
Number:
1 P-Channel
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
310pF
Output Capacitance(Coss):
22pF
Gate Charge(Qg):
5.4nC@10V
Mfr. Part #:
XCH2309
Package:
SOT-23
Product Description
Product Overview
The FKN3601 is a high cell density trenched P-channel MOSFET designed for fast switching applications. It offers excellent RDS(ON) and efficiency, making it ideal for small power switching and load switch applications. This device meets RoHS and Green Product requirements and has undergone full function reliability approval.
Product Attributes
- Green Device Available
- Super Low Gate Charge
- Excellent CdV/dt effect decline
- Advanced high cell density Trench technology
Technical Specifications
| Parameter | Symbol | Value | Unit | Condition |
| Drain-Source voltage | VDS | -60 | V | |
| Gate-Source voltage | VGS | 20 | V | |
| Continuous Drain Current | ID | -2.0 | A | |
| Pulsed Drain Current | IDM | -5.2 | A | 1 |
| Power Dissipation | PD | 1 | W | |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature | TSTG | -55~ 150 | C | |
| Thermal Resistance Junction to Ambient | RJA | 125 | C/W | 2 |
| Drain-Source Breakdown Voltage | (BR)DSS | -60 | V | VGS=0V, ID=-250A |
| Zero Gate Voltage Drain Current | IDSS | -1 | A | VDS=-60V, VGS=0V, TA=25 |
| Zero Gate Voltage Drain Current | IDSS | -100 | uA | VDS=-60V, VGS=0V, TA=125 |
| Gate-Body Leakage Current | IGSS | 100 | nA | VGS=20V, VDS=0V |
| Gate Threshold Voltage | VGS(TH) | -1.0 -1.5 -2.5 | V | VDS=VGS, ID=-250A |
| Drain-Source On-State Resistance | RDS(ON) | -- 160 200 | m | VGS=-10V, ID=-2A2 |
| Drain-Source On-State Resistance | RDS(ON) | -- 200 300 | m | VGS=-4.5V, ID=-1A2 |
| Input Capacitance | Ciss | -- 310 -- | pF | VDS=-30V, VGS=0V, f=1MHz |
| Output Capacitance | Coss | -- 22 -- | pF | |
| Reverse Transfer Capacitance | Crss | -- 15 -- | pF | |
| Total Gate Charge | Qg | -- 5.4 -- | nC | VDS=-30V, ID=-2A, VGS=-10V |
| Gate Source Charge | Qgs | -- 1.1 -- | nC | |
| Gate Drain Charge | Qgd | -- 1.6 -- | nC | |
| Turn on Delay Time | td(on) | -- 41 -- | ns | VDD=-30V, ID=-2A, RG=3.3, VGS=-10V |
| Turn on Rise Time | trt | -- 22 -- | ns | |
| Turn Off Delay Time | td(off) | - 25 -- | ns | |
| Turn Off Fall Time | tft | -- 32 -- | ns | |
| Source drain current (Body Diode) | ISD | -- -2.0 | A | TA=25 |
| Forward on voltage (Body Diode) | VSD | -- -0.84 -1.2 | V | Tj=25, ISD=-2A, VGS=0V2 |
2506111631_XCH-XCH2309_C7441509.pdf
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