Power Switching 650V N Channel VDMOS XCH 8N65F with Fast Switching Speeds and Low On State Resistance
Key Attributes
Model Number:
8N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-
RDS(on):
1.3Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
101pF
Number:
1 N-channel
Output Capacitance(Coss):
95pF
Input Capacitance(Ciss):
1.46nF
Pd - Power Dissipation:
48W
Gate Charge(Qg):
-
Mfr. Part #:
8N65F
Package:
TO-220F
Product Description
Product Overview
The 8N65F is a 650V N-Channel VDMOS designed for high-efficiency power switching applications. It features fast switching speeds, low on-state resistance, and low input capacitance, making it suitable for chargers, LED drivers, and power adapters. This product complies with RoHS and other environmental directives and requires anti-static handling during use and storage.
Product Attributes
- Certifications: RoHS and other environmental directives
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typical | Max | Unit |
| 4.1 Absolute Maximum Ratings (Tamb= 25 unless otherwise specified) | ||||||
| Drain-Source Voltage | VDSS | 650 | V | |||
| Continuous Drain Current | ID | 8 | A | |||
| Pulsed Drain Current | IDM | 32 | A | |||
| Gate-Source Voltage | VGS | 30 | V | |||
| Single Pulse Avalanche Energy | EAS | 360 | mJ | |||
| Thermal Resistance (Junction to Case) | RJC | 2.6 | /W | |||
| Power Dissipation (Ta=25) | Ptot | 48 | W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| 4.2 Electrical Characteristics (Tamb= 25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 650 | V | ||
| On-State Resistance | RDSON | VGS=10V, ID=4A | 1.00 | 1.3 | ||
| Threshold Voltage | VGSTH | VDS=VGS, ID=250A | 2 | 4 | V | |
| Drain-Source Leakage Current | IDSS | VDS=630V, VGS=0V | 25 | A | ||
| Gate-Source Leakage Current | IGSS | VGS= 30V | 100 | nA | ||
| Source-Drain Diode Forward Voltage | VSD | IS=8A, VGS=0V | 1.5 | V | ||
| Turn-off Delay Time | td(off) | VDD=300V, ID=8A RG=4.7, VGS=10V | 26 | ns | ||
| Input Capacitance | Ciss | VGS=0V, VDS=25V f=1.0MHZ | 1460 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=25V f=1.0MHZ | 95 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=25V f=1.0MHZ | 101 | pF | ||
2409280230_XCH-8N65F_C19184672.pdf
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