Low gate charge MOSFET XYD X6P5N065THB3 with 65 Volt drain source voltage and 91 Ampere continuous current rating
Key Attributes
Model Number:
X6P5N065THB3
Product Custom Attributes
Mfr. Part #:
X6P5N065THB3
Package:
TO-220-3L
Product Description
Product Overview
The X6P5N065THB3 is an N-channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It offers high power and current handling capability, low gate charge, and is 100% UIS and DVDS tested. This MOSFET is ideal for DC/DC converters and high-frequency switching applications, including synchronous rectification.
Product Attributes
- Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
- Product Name: X6P5N065THB3
- Package: TO-220-3L
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Values | Unit | Note/Test Conditions | |
| Absolute Maximum Ratings | VDSS | 65 | V | - | |
| VGS | -20 to 20 | V | - | ||
| ID (TC=25) | - | 91 | A | - | |
| ID (TC=100) | - | 64 | A | - | |
| IDM | - | 364 | A | - | |
| EAS | - | 441 | mJ | L=0.5mH,VD=40V, TC=25 | |
| PD (TC=25) | - | 115 | W | - | |
| PD (TC=100) | - | 57 | W | - | |
| Tj,TSTG | -55 to 175 | - | |||
| Rth(J-c) | - | 1.4 | /W | - | |
| Electrical Characteristics | BVDSS | 65 | V | VGS=0V,ID=250A | |
| IDSS | - | 1 | A | VDS=65V,VGS=0V | |
| IGSSF | - | 100 | nA | VGS=20V,VDS=0V | |
| IGSSR | - | -100 | nA | VGS=-20V,VDS=0V | |
| VGS(th) | 2 to 4 | V | VDS=VGS,ID=250A | ||
| RDS(on) | 5.4 to 6.5 | m | VGS=10V,ID=40A | ||
| Rg | - | 0.57 | VGS=0V, VDS=0V, f=1MHz | ||
| gfs | - | 16.5 | S | VDS=10V,ID=20A | |
| Ciss | - | 5308 | pF | VDS=30V,VGS=0V,f=1.0MHZ | |
| Coss | - | 304 | pF | VDS=30V,VGS=0V,f=1.0MHZ | |
| Crss | - | 191 | pF | VDS=30V,VGS=0V,f=1.0MHZ | |
| td(on) | - | 11 | ns | VDD=30V,RGEN=3,VGS=10V,RL=1.5 | |
| tr | - | 6 | ns | VDD=30V,RGEN=3,VGS=10V,RL=1.5 | |
| td(off) | - | 54 | ns | VDD=30V,RGEN=3,VGS=10V,RL=1.5 | |
| tf | - | 14 | ns | VDD=30V,RGEN=3,VGS=10V,RL=1.5 | |
| Qg | - | 90.6 | nC | VDS=30V,ID=20A,VGS=10V | |
| Qgs | - | 26.2 | nC | VDS=30V,ID=20A,VGS=10V | |
| Qgd | - | 26.2 | nC | VDS=30V,ID=20A,VGS=10V | |
| Reverse Diode | ISD | - | 91 | A | - |
| VSD | - | 1.2 | V | IS=40A,VGS=0V | |
| trr | - | 45 | ns | VGS=0V,IS=20A,di/dt=100A/s | |
| Qrr | - | 63 | nC | VGS=0V,IS=20A,di/dt=100A/s |
2509251450_XYD-X6P5N065THB3_C51952908.pdf
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