Low Reverse Leakage Schottky Diode ZHIDE TSS56LBF with Molded Plastic Body and Pure Tin Plated Leads
Key Attributes
Model Number:
TSS56LBF
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
150A
Diode Configuration:
1 Independent
Operating Junction Temperature Range:
-55℃~+125℃
Voltage - DC Reverse (Vr) (Max):
60V
Voltage - Forward(Vf@If):
550mV@5A
Current - Rectified:
5A
Mfr. Part #:
TSS56LBF
Package:
SMBF
Product Description
Product Overview
The TSS56LBF is a surface-mount Schottky barrier rectifier designed for high-reliability applications. It features low reverse leakage, high forward surge capability, and is guaranteed for high-temperature soldering. This diode is RoHS compliant and available in a green compound version.
Product Attributes
- Brand: TSS
- Model: TSS56LBF
- Origin: Changzhou zhide Electronics CO.,LTD
- Material: Molded plastic (SMBF), Epoxy UL 94V-0 rate flame retardant, Pure tin plated lead (lead free)
- Color: Green compound (with suffix "-F")
- Certifications: RoHS standard, UL 94V-0
Technical Specifications
| Parameter | Symbol | TSS56LBF | Unit |
| Surface Mounted Schottky Barrier Rectifiers | |||
| Reverse Voltage | 60 | V | |
| Forward Current | 5.0 | A | |
| Maximum Repetitive Peak Reverse Voltage | VRRM | 60 | V |
| Maximum RMS Voltage | VRMS | 42 | V |
| Maximum DC Blocking Voltage | VDC | 60 | V |
| Maximum Average Forward Rectified Current | IF(AV) | 5.0 | A |
| Non-repetitive Peak Forward Surge Current (8.3 ms single half sine-wave) | IFSM | 150 | A |
| Maximum Forward Voltage @ IF=5.0A | VF | 0.55 | V |
| Maximum Reverse Current @ VDC TA= 25 | IR | 0.5 | mA |
| Maximum Reverse Current @ VDC TA= 100 | IR | 10 | mA |
| Typical Junction Capacitance VR=4.0V,f=1MHz | CJ | 300 | pF |
| Operating Junction Temperature | TJ | -55 --- +125 | |
| Storage Temperature Range | TSTG | -55 --- +150 | |
| Typical Thermal Resistance (Note 1) Junction to Ambient | RJA | 105 | /W |
2410121450_ZHIDE-TSS56LBF_C5161925.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Power electronics IGBT YANGJIE MG150HF12TLC1 featuring trench technology and ultra fast soft recovery anti parallel FWD
Product OverviewThe MG150HF12TLC1 S-M409 is a high-performance IGBT module designed for demanding power electronics applications. It features low VCE(sat) with Trench technology, a positive temperature coefficient for VCE(sat), high short circuit capability, and an integrated ultra-fast & soft ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
