General purpose NPN power transistor YANGJIE MJD31CQ featuring epoxy casing and AECQ101 qualification for switching
Key Attributes
Model Number:
MJD31CQ
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50uA
DC Current Gain:
10@3A,4V
Transition Frequency(fT):
3MHz
Number:
1 NPN
Vce Saturation(VCE(sat)):
1.2V@3A,0.375A
Type:
NPN
Pd - Power Dissipation:
1.6W
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
100V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MJD31CQ
Package:
TO-252
Product Description
Product Overview
The MJD31CQ is an NPN Power Transistor designed for general purpose amplifier and low speed switching applications. It features an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. The device is moisture sensitivity level 1 and AEC-Q101 qualified.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China
- Certifications: AEC-Q101 qualified, RoHS Compliant
Technical Specifications
| Item | Symbol | Unit | Conditions | Min | Typ | Max |
| Maximum Ratings | ||||||
| Collector-Base Voltage | VCBO | V | 100 | |||
| Collector-Emitter Voltage | VCEO | V | 100 | |||
| Emitter-Base Voltage | VEBO | V | 5 | |||
| Collector Current -Continuous | IC | A | 3 | |||
| Total Device Dissipation (*) | PD | W | (Ta=25) | 1.6 | ||
| Thermal Resistance, Junction to Ambient Air (*) | RthJA | /W | (Ta=25) | 79 | ||
| Thermal Resistance, Junction to Mounting Base | RthJ-mb | /W | 8.3 | |||
| Junction Temperature | Tj | -55 | +150 | |||
| Storage Temperature | TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Collector-base breakdown voltage | VCBO | V | IC= 1mA, IE=0 | 100 | ||
| Collector-emitter breakdown voltage | VCEO | V | IC= 30mA, IB=0 | 100 | ||
| Emitter-base breakdown voltage | VEBO | V | IE= 1mA, IC=0 | 5 | ||
| Collector-base cut-off current | ICEO | uA | VCE= 60V, IB =0 | 50 | ||
| Collector-base cut-off current | ICES | uA | VCE= 100V , VEB=0 | 20 | ||
| Emitter-base cut-off current | IEBO | mA | VEB= 5V , IC=0 | 1 | ||
| DC current gain | hFE | VCE= 4V, IC= 1A | 25 | |||
| DC current gain | hFE | VCE= 4V, IC= 3A | 10 | 75 | ||
| Collector-emitter saturation voltage | VCE(sat) | V | IC= 3A, IB= 0.375A | 1.2 | ||
| Base-emitter voltage | VBE | V | IC= 3A, VCE= 4V | 1.8 | ||
| Other Characteristics | ||||||
| Transition frequency | fT | MHz | VCE= 10V, IC= 0.5A, f=1KHz | 3 | ||
2410121548_YANGJIE-MJD31CQ_C2942580.pdf
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