Dual NPN Small Signal Transistor YANGJIE MMDT5551 in SOT363 Package with UL94 V0 Flammability Rating
Key Attributes
Model Number:
MMDT5551
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
DC Current Gain:
80@1mA,5V
Transition Frequency(fT):
100MHz
Vce Saturation(VCE(sat)):
150mV
Type:
NPN
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
160V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMDT5551
Package:
SOT-363
Product Description
Product Overview
The MMDT5551 is a Dual NPN Small Signal Transistor housed in a SOT-363 surface mount package, ideally suited for automatic insertion. Its epoxy casing meets UL-94 V-0 flammability rating, and it features tin-plated leads solderable per J-STD-002 and JESD22-B102. This transistor is designed for general electronic applications and is RoHS compliant.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Package: SOT-363
- Flammability Rating: UL-94 V-0
- Certifications: RoHS Compliant
Technical Specifications
| Item | Symbol | Unit | Conditions | Value |
| Collector-Base Voltage | VCBO | V | IC=100A,IE=0 | 180 |
| Collector-Emitter Voltage | VCEO | V | IC=1mA,IB=0 | 160 |
| Emitter-Base Voltage | VEBO | V | IE=10A,IC=0 | 6 |
| Collector Current -Continuous | IC | mA | 600 | |
| Total Device Dissipation | PC | mW | 200 | |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature | TSTG | -55 to +150 | ||
| Collector cut-off current | ICBO | nA | VCB=120V,IE=0 | 50 |
| Emmiter cut-off current | IEBO | nA | VEB=4V, IC=0 | 50 |
| DC current gain | hFE1 | VCE=5V,IC=1mA | 80 | |
| DC current gain | hFE2 | VCE=5V,IC=10mA | 100 | |
| DC current gain | hFE3 | VCE=5V,IC=50mA | 300 | |
| Collector-emitter saturation voltage | VCE(sat) | V | IC=10mA,IB=1mA | 0.15 |
| Collector-emitter saturation voltage | VCE(sat) | V | IC=50mA,IB=5mA | 0.2 |
| Base-emitter saturation voltage | VBE(sat) | V | IC=10mA,IB=1mA | 1 |
| Base-emitter saturation voltage | VBE(sat) | V | IC=50mA,IB=5mA | 1 |
| Transition frequency | fT | MHz | VCE=10V,IC=10mA,f=100MHz | 100 |
| Transition frequency | fT | MHz | VCE=10V,IC=10mA,f=100MHz | 300 |
| Output Capacitance | Cob | pF | VCB=10V, IE=0, f=1.0MHz | 6 |
| Noise Figure | NF | dB | VCE=5V, IC=0.2mA, f=1kHz, RS=1K | 8 |
2410121855_YANGJIE-MMDT5551_C968397.pdf
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