Automotive Grade NPN Transistor YANGJIE MMBT3904Q with UL94 V0 Flammability and AECQ101 Qualification

Key Attributes
Model Number: MMBT3904Q
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
50nA
DC Current Gain:
300@10mA,1V
Vce Saturation(VCE(sat)):
300mV@50mA,5mA
Type:
NPN
Pd - Power Dissipation:
300mW
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMBT3904Q
Package:
SOT-23
Product Description

Product Overview

The MMBT3904Q is an NPN General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It is AEC-Q101 qualified and features epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This device is designed for automotive electronics applications.

Product Attributes

  • Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
  • Origin: China (implied by company name and website)
  • Certifications: RoHS Compliant, AEC-Q101 Qualified
  • Flammability Rating: UL-94 V-0
  • Halogen Free: Yes
  • Moisture Sensitivity Level: 1

Technical Specifications

ItemSymbolUnitConditionsValue
Maximum RatingsVCBOV60
VCEOV40
VEBOV6.0
ICmAContinuous200
PD (*)mWTa=25300
Thermal ResistanceRthJA (*)K/W357
Junction TemperatureTj-55 to +150
Storage TemperatureTSTG-55 to +150
Electrical CharacteristicsV(BR)CEOVdcIC =1.0mAdc,IB=040
V(BR)CBOVdcIC=10uAdc,IE=060
V(BR)EBOVdcIE=10Adc,IC=06.0
ICBOnAdcVCB=60Vdc, IE =050
ICEXnAdcVCE=30VdcC, VEB=3.0Vdc50
DC current gainhFEVCE=1Vdc,IC=0.1mAdc40
hFEVCE=1Vdc,IC=1.0mAdc70
hFEVCE=1Vdc,IC=10mAdc100 - 300
hFEVCE=1Vdc,IC=50mAdc60
hFEVCE=1Vdc,IC=100mAdc30
Collector-emitter saturation voltageVCE(sat)VdcIC=10mAdc,IB=1.0mAdc0.2
VCE(sat)VdcIC=50mAdc,IB=5.0mAdc0.3
Base-emitter saturation voltageVBE(sat)VdcIC=10mAdc,IB=1.0mAdc0.65 - 0.85
VBE(sat)VdcIC=50mAdc,IB=5.0mAdc0.95
Output CapacitanceCobopFVCB=5.0Vdc,f=1.0MHz,IE=04.0
Input CapacitanceCibopFVEB=0.5Vdc,f=1.0MHz,IC=08.0
Delay timetdnsVCC=3.0Vdc, VBE=0.5Vdc, IC=10mAdc,IB1=1.0mAdc35
Rise timetrnsVCC=3.0Vdc, VBE=0.5Vdc, IC=10mAdc,IB1=1.0mAdc35
Storage timetsnsVCC=3.0Vdc, IC=10mAdc,IB1=IB2=1.0mAdc200
Fall timetfnsVCC=3.0Vdc, IC=10mAdc,IB1=IB2=1.0mAdc50

2411071803_YANGJIE-MMBT3904Q_C2942583.pdf

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