P Channel Enhancement Mode MOSFET YANGJIE YJQ55P02A for Load Switching and High Current Applications
Key Attributes
Model Number:
YJQ55P02A
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
55A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.5mΩ@4.5V,15A
Gate Threshold Voltage (Vgs(th)):
400mV
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
477pF@10V
Number:
1 P-Channel
Output Capacitance(Coss):
690pF
Input Capacitance(Ciss):
6.358nF@10V
Pd - Power Dissipation:
3.2W
Gate Charge(Qg):
12.7nC@10V
Mfr. Part #:
YJQ55P02A
Package:
DFN3333-8L
Product Description
Product Overview
The YJQ55P02A is a P-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Trench Power LV MOSFET technology, it offers a high density cell design for low RDS(ON) and excellent heat dissipation. This transistor is suitable for high current load applications, load switching, hard switched and high frequency circuits, and uninterruptible power supplies.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China
- Certifications: RoHS COMPLIANT
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | -20 | V | |||
| Gate-source Voltage | VGS | ±10 | V | |||
| Drain Current (TA=25) | ID | 55 | A | |||
| Drain Current (TA=100) | ID | 35 | A | |||
| Pulsed Drain Current | IDM | 160 | A | |||
| Single Pulse Avalanche Energy | EAS | 75 | mJ | |||
| Total Power Dissipation (TC=25) | PD | 38 | W | |||
| Total Power Dissipation (TA=25) | PD | 3.2 | W | |||
| Junction-to-Case Thermal Resistance | RJC | 3.3 | ℃/W | |||
| Junction-to-Ambient Thermal Resistance | RJA | 39 | ℃/W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | ℃ | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250µA | -20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V,VGS=0V | 1 | µA | ||
| Gate-Body Leakage Current | IGSS | VGS= ±10V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=-250µA | -0.4 | -0.62 | -1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= -4.5V, ID=-15A | 6.5 | 8.3 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= -2.5V, ID=-10A | 8.0 | 10.0 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= -1.8V, ID=-8.0A | 10.3 | 15 | mΩ | |
| Diode Forward Voltage | VSD | IS=-20A,VGS=0V | -0.7 | -1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | -55 | A | |||
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=-10V,VGS=0V,f=1MHZ | 6358 | pF | ||
| Output Capacitance | Coss | VDS=-10V,VGS=0V,f=1MHZ | 690 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-10V,VGS=0V,f=1MHZ | 477 | pF | ||
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=-10V,VDS=-15V,ID=-9.1A | 12.7 | nC | ||
| Gate-Source Charge | Qgs | VGS=-10V,VDS=-15V,ID=-9.1A | 21 | nC | ||
| Gate-Drain Charge | Qg d | VGS=-10V,VDS=-15V,ID=-9.1A | 149 | nC | ||
| Reverse Recovery Charge | Qrr | IF=-6A, di/dt=100A/us | 25.2 | nC | ||
| Reverse Recovery Time | trr | IF=-6A, di/dt=100A/us | 46 | ns | ||
| Turn-on Delay Time | tD(on) | VGS=-10V,VDD=-15V, ID=-6A RGEN=2.5Ω | 11 | ns | ||
| Turn-on Rise Time | tr | VGS=-10V,VDD=-15V, ID=-6A RGEN=2.5Ω | 36 | ns | ||
| Turn-off Delay Time | tD(off) | VGS=-10V,VDD=-15V, ID=-6A RGEN=2.5Ω | 182 | ns | ||
| Turn-off fall Time | tf | VGS=-10V,VDD=-15V, ID=-6A RGEN=2.5Ω | 191 | ns | ||
2409291604_YANGJIE-YJQ55P02A_C919547.pdf
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