Slkor DTC123JE
Key Attributes
Model Number:
DTC123JE
Product Custom Attributes
DC Current Gain:
80@10mA,5V
Current - Collector(Ic):
100mA
Operating Temperature:
-55℃~+150℃
Output Voltage(VO(on)):
300mV
Type:
NPN
Transition Frequency(fT):
250MHz
Input Resistor:
2.2kΩ
Vce Saturation(VCE(sat)):
300mV@250uA,5mA
Resistor Ratio:
26
Pd - Power Dissipation:
150mW
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTC123JE
Package:
SOT-523
Product Description
Product Overview
The DTC123J Series Digital Transistors (NPN) feature built-in bias resistors, simplifying inverter circuit configurations by eliminating the need for external input resistors. These thin-film resistors offer complete isolation for negative biasing and minimize parasitic effects. Operation is simplified to setting on/off conditions, facilitating device design. This series is suitable for applications where simplified digital logic and reduced component count are desired.
Product Attributes
- Brand: SLKOR Micro
- Series: DTC123J
- Type: Digital Transistor (NPN)
- Resistor Type: Thin-film
Technical Specifications
| Part Number | Package | Packing Method | Pack Quantity | VCC (V) | VIN (V) | IO (mA) | PD (mW) | TJ,Tstg (C) | VI(off) (V) | VI(on) (V) | VO(on) (V) | II (mA) | IO(off) (A) | GI | R1 (k) | R2/R1 | fT (MHz) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DTC123JE | SOT-523 | Reel | 3000 | 50 | -5+12 | 100 | 100 | -55+150 | 0.5 | 1.1 | 0.1-0.3 | 3.6 | 0.5 | 80 | 1.54-2.86 | 17-26 | 250 |
| DTC123JUA | SOT-323 | Reel | 3000 | 50 | -5+12 | 100 | 150 | -55+150 | 0.5 | 1.1 | 0.1-0.3 | 3.6 | 0.5 | 80 | 1.54-2.86 | 17-26 | 250 |
| DTC123JKA | SOT-23-3L | Reel | 3000 | 50 | -5+12 | 100 | 200 | -55+150 | 0.5 | 1.1 | 0.1-0.3 | 3.6 | 0.5 | 80 | 1.54-2.86 | 17-26 | 250 |
| DTC123JCA | SOT-23 | Reel | 3000 | 50 | -5+12 | 100 | 200 | -55+150 | 0.5 | 1.1 | 0.1-0.3 | 3.6 | 0.5 | 80 | 1.54-2.86 | 17-26 | 250 |
| DTC123JSA | SOT-23 | Reel | 3000 | 50 | -5+12 | 100 | 300 | -55+150 | 0.5 | 1.1 | 0.1-0.3 | 3.6 | 0.5 | 80 | 1.54-2.86 | 17-26 | 250 |
2412171034_Slkor-DTC123JE_C42415194.pdf
Related Products
Power MOSFET Slkor SL160N03R with 160A Continuous Drain Current and High Energy Pulse Resistance
Product OverviewThis Power MOSFET utilizes advanced TRENCH technology to minimize conduction loss, enhance switching performance, and provide superior resistance to high energy pulses in avalanche and commutation modes. It is designed for applications requiring efficient power management, including ...
power management solution Slkor SL2026 P Channel MOSFET with low on state resistance and gate charge
Product OverviewThe SL2026 is a P-Channel MOSFET featuring leading trench technology for low on-state resistance (RDS(on)) and low gate charge. Designed for efficient power management, it offers a drain-source voltage of -20V and a continuous drain current of -3.2A. Its robust design makes it ...
1200V SiC MOSFET Slkor SL87N120A Featuring Fast Recovery Diode and Recommended 18V Gate Drive Voltage
Product OverviewThe SL87N120A is a 1200V, 17m SiC MOSFET designed for high-performance applications. It features a recommended 18V gate drive, high voltage capability, low on-resistance, high switching speed with low parasitic capacitance, and high operating junction temperature. The device also ...
Power Management with Slkor SL4813A P Channel Enhancement Mode Field Effect Transistor and Trench MOSFET
Product OverviewThe SL4813A is a P-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology for high density cell design and low RDS(ON). It offers high-speed switching capabilities, making it suitable for battery protection, load switching, and power management ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
