Slkor DTC114EE
Key Attributes
Model Number:
DTC114EE
Product Custom Attributes
DC Current Gain:
30@5mA,5V
Operating Temperature:
-
Current - Collector(Ic):
100mA
Output Voltage(VO(on)):
-
Input Resistor:
10kΩ
Number:
1 NPN (Pre-Biased)
Resistor Ratio:
1
Pd - Power Dissipation:
150mW
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
DTC114EE
Package:
SOT-523
Product Description
Product Overview
This NPN silicon epitaxial planar digital transistor features built-in bias resistors, simplifying circuit design and reducing the quantity of parts and manufacturing processes. It is suitable for various digital applications.
Product Attributes
- Brand: SLKORMICRO (implied by website)
- Origin: Not specified
- Material: Silicon Epitaxial Planar
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Conditions |
| Collector Emitter Voltage | VCEO | - | - | 50 | V | - |
| Input Voltage | VI | -10 | - | 40 | V | - |
| Collector Current | IC | - | - | 100 | mA | - |
| Power Dissipation | Ptot | - | - | 150 | mW | Ta = 25 |
| Junction Temperature | Tj | - | - | 150 | - | |
| Storage Temperature Range | Tstg | -55 | - | 150 | - | |
| DC Current Gain | hFE | 30 | - | - | - | VCE = 5 V, IC = 5 mA |
| Collector Base Cutoff Current | ICBO | - | - | 500 | nA | VCB = 50 V |
| Emitter Base Cutoff Current | IEBO | - | - | 0.88 | mA | VEB = 5 V |
| Collector Emitter Saturation Voltage | VCE(sat) | - | - | 0.3 | V | IC = 10 mA, IB = 0.5 mA |
| Input on Voltage | VI(on) | - | - | 3 | V | VCE = 0.3 V, IC = 10 mA |
| Input off Voltage | VI(off) | 0.5 | - | - | V | VCE = 5 V, IC = 100 A |
| Transition frequency | fT | - | 250 | - | MHz | VCE = 10 V, -IE = 5 mA, f = 100 MHz |
| Input Resistance | R1 | 7 | 10 | 13 | K | - |
| Resistance Ratio | R2 / R1 | 0.8 | 1 | 1.2 | - | - |
MARKING: DTC114EE
2201210930_Slkor-DTC114EE_C2965554.pdf
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