Slkor BTA12-600B
Key Attributes
Model Number:
BTA12-600B
Product Custom Attributes
Operating Temperature:
-40℃~+125℃
Holding Current (Ih):
20mA
Current - Gate Trigger(Igt):
30mA
Voltage - On State(Vtm):
1.4V
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
12A
Peak Off - State Voltage(Vdrm):
600V
SCR Type:
-
Gate Trigger Voltage (Vgt):
1.5V
Mfr. Part #:
BTA12-600B
Package:
TO-220
Product Description
Product Overview
This product is a Bi-Directional Triode Thyristor (TRIAC) designed for power control applications. It offers high performance with a repetitive peak off-state voltage of 600V and an RMS on-state current of 12A. Key features include high commutation dv/dt and an isolation voltage of 1500V AC, making it suitable for various industrial and consumer electronics where reliable switching and isolation are required.
Features
- Repetitive Peak Off-State Voltage: 600V
- R.M.S On-State Current (IT(RMS)= 12 A)
- High Commutation dv/dt
- Isolation Voltage (VISO = 1500V AC)
Product Type
Bi-Directional Triode Thyristor (TRIAC)
Package Type
TO-220F
Brand
SLKOR
Model
BTA12-600B
| Symbol | Parameter | Condition | Ratings | Units |
|---|---|---|---|---|
| VDRM | Repetitive Peak Off-State Voltage | TJ = 25C unless otherwise specified | 600 | V |
| IT(RMS) | R.M.S On-State Current | TC = 79 C | 12 | A |
| ITSM | Surge On-State Current | One Cycle, 50Hz/60Hz, Peak, Non-Repetitive | 119/130 | A |
| I2t | I2t | 71 | A2s | |
| PGM | Peak Gate Power Dissipation | 5.0 | W | |
| PG(AV) | Average Gate Power Dissipation | 0.5 | W | |
| IGM | Peak Gate Current | 2.0 | A | |
| VGM | Peak Gate Voltage | 10 | V | |
| VISO | Isolation Breakdown Voltage(R.M.S.) | A.C. 1 minute | 1500 | V |
| TJ | Operating Junction Temperature | -40 ~ 125 | C | |
| TSTG | Storage Temperature | -40 ~ 150 | C | |
| Mass | 2.0 | g |
| Symbol | Items | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| IDRM | Repetitive Peak Off-State Current | VD = VDRM, Single Phase, Half Wave TJ = 125 C | - | - | 2.0 | mA |
| VTM | Peak On-State Voltage | IT = 20 A, Inst. Measurement | - | - | 1.4 | V |
| I+ GT1 | Gate Trigger Current | VD = 6 V, RL=10 | - | - | 30 | mA |
| I- GT1 | - | - | 30 | mA | ||
| I- GT3 | - | - | 30 | mA | ||
| V+ GT1 | Gate Trigger Voltage | VD = 6 V, RL=10 | - | - | 1.5 | V |
| V- GT1 | - | - | 1.5 | V | ||
| V- GT3 | - | - | 1.5 | V | ||
| VGD | Non-Trigger Gate Voltage | TJ = 125 C, VD = 1/2 VDRM | 0.2 | - | - | V |
| (dv/dt)c | Critical Rate of Rise Off-State Voltage at Commutation | TJ = 125 C, [di/dt]c = -6.0 A/ms, VD=2/3 VDRM | 10 | - | - | V/ |
| IH | Holding Current | - | 20 | - | mA | |
| Rth(j-c) | Thermal Impedance Junction to case | - | - | 3.3 | C/W |
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