power transistor A Power microelectronics AP50N06Y N Channel Enhancement Mode MOSFET with 60V rating and switching
Key Attributes
Model Number:
AP50N06Y
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
Operating Temperature -:
-55℃~+150℃
RDS(on):
25mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
97pF
Number:
1 N-channel
Output Capacitance(Coss):
145pF
Input Capacitance(Ciss):
2.423nF
Pd - Power Dissipation:
45W
Gate Charge(Qg):
19.3nC@4.5V
Mfr. Part #:
AP50N06Y
Package:
TO-251
Product Description
Product Overview
The AP50N06Y is a 60V N-Channel Enhancement Mode MOSFET from Yongyuan Microelectronics Technology Co., Ltd. It utilizes advanced trench technology to deliver excellent RDS(ON) and low gate charge, with the capability to operate at gate voltages as low as 4.5V. This MOSFET is well-suited for applications such as battery protection and general switching tasks. It is available in TO-251L-3L and TO-251S-3L packages.
Product Attributes
- Brand: Yongyuan Microelectronics Technology Co., Ltd. ()
- Product ID: AP50N06Y
- Technology: Advanced Trench Technology
- Mode: N-Channel Enhancement Mode
Technical Specifications
| Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| General Features | |||||
| VDS | 60 | V | |||
| ID | 50 | A | |||
| RDS(ON) | VGS=10V | 14 | 20 | m | |
| Absolute Maximum Ratings | (TC=25 unless otherwise noted) | ||||
| VDS | 60 | V | |||
| VGS | 20 | V | |||
| ID@TC=25 | VGS @ 10V | 50 | A | ||
| ID@TC=100 | VGS @ 10V | 25 | A | ||
| IDM | Pulsed Drain Current | 90 | A | ||
| EAS | Single Pulse Avalanche Energy | 39.2 | mJ | ||
| IAS | Avalanche Current | 28 | A | ||
| PD@TC=25 | Total Power Dissipation | 45 | W | ||
| PD@TA=25 | Total Power Dissipation | 2 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | ||
| TJ | Operating Junction Temperature Range | -55 | 150 | ||
| RJA | Thermal Resistance Junction-Ambient | 62 | /W | ||
| RJC | Thermal Resistance Junction-Case | 2.8 | /W | ||
| Electrical Characteristics | (TJ=25, unless otherwise noted) | ||||
| BVDSS | Drain-Source Breakdown Voltage (VGS=0V, ID=250uA) | 60 | 65 | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance (VGS=10V, ID=20A) | 14 | 20 | m | |
| RDS(ON) | Static Drain-Source On-Resistance (VGS=4.5V, ID=10A) | 18 | 25 | V | |
| VGS(th) | Gate Threshold Voltage (VGS=VDS, ID =250uA) | 1.2 | 1.8 | 2.5 | V |
| IDSS | Drain-Source Leakage Current (VDS=48V, VGS=0V, TJ=25) | --- | --- | 1 | uA |
| IDSS | Drain-Source Leakage Current (VDS=48V, VGS=0V, TJ=55) | --- | --- | 5 | uA |
| IGSS | Gate-Source Leakage Current (VGS=20V, VDS=0V) | --- | --- | 100 | nA |
| gfs | Forward Transconductance (VDS=5V, ID=15A) | 45 | --- | S | |
| Qg | Total Gate Charge (4.5V) (VDS=48V, VGS=4.5V, ID=15A) | 19.3 | --- | nC | |
| Td(on) | Turn-On Delay Time (VDD=30V, VGS=10V, RG=3.3, ID=15A) | 7.2 | --- | ns | |
| Tr | Rise Time | 50 | --- | ns | |
| Td(off) | Turn-Off Delay Time | 36.4 | --- | ns | |
| Tf | Fall Time | 7.6 | --- | ns | |
| Ciss | Input Capacitance (VDS=15V, VGS=0V, f=1MHz) | 2423 | --- | pF | |
| Coss | Output Capacitance | 145 | --- | pF | |
| Crss | Reverse Transfer Capacitance | 97 | --- | pF | |
| IS | Continuous Source Current (VG=VD=0V, Force Current) | --- | --- | 35 | A |
| ISM | Pulsed Source Current | 80 | A | ||
| VSD | Diode Forward Voltage (VGS=0V, IS=A, TJ=25) | --- | --- | 1 | V |
| trr | Reverse Recovery Time (IF=15A,dI/dt=100A/s,TJ=25) | 16.3 | --- | nS | |
| Qrr | Reverse Recovery Charge | 11 | --- | nC | |
| Package Marking and Ordering Information | |||||
| Product ID | Pack | Marking | Qty(PCS) | ||
| AP50N06Y | TO-251L-3L | AP50N06Y XXXX YYYY | 4000 | ||
| AP50N06Y | TO-251S-3L | AP50N06Y XXXX YYYY | 4000 |
Package Mechanical Data
TO-251L-3L
| Symbol | mm | Mim | Nom | Max |
|---|---|---|---|---|
| A | 2.2 | 2.3 | 2.4 | |
| A1 | 0.9 | 1.0 | 1.1 | |
| b | 0.66 | 0.76 | 0.86 | |
| C | 0.46 | 0.52 | 0.58 | |
| D | 6.50 | 6.6 | 6.7 | |
| D1 | 5.15 | 5.3 | 5.45 | |
| D2 | 4.6 | 4.8 | 4.95 | |
| E | 10.4 | ---- | 11.5 | |
| E1 | 6.0 | 6.1 | 6.2 | |
| E2 | 5.400REF | |||
| e | 2.286BSC | |||
| L | 3.5 | 4.0 | 4.3 | |
| L1 | 0.9 | --- | 1.27 | |
| L2 | 1.4 | --- | 1.9 |
TO-251S-3L
| Symbol | mm | Mim | Nom | Max |
|---|---|---|---|---|
| A | 2.2 | 2.3 | 2.4 | |
| A1 | 0.9 | 1.0 | 1.1 | |
| b | 0.66 | 0.76 | 0.86 | |
| C | 0.46 | 0.52 | 0.58 | |
| D | 6.50 | 6.6 | 6.7 | |
| D1 | 5.15 | 5.3 | 5.45 | |
| D2 | 4.6 | 4.8 | 4.95 | |
| E | 10.4 | ---- | 11.5 | |
| E1 | 6.0 | 6.1 | 6.2 | |
| E2 | 5.400REF | |||
| e | 2.286BSC | |||
| L | 3.5 | 4.0 | 4.3 | |
| L1 | 0.9 | --- | 1.27 | |
| L2 | 1.4 | --- | 1.9 |
2409272301_A-Power-microelectronics-AP50N06Y_C3011332.pdf
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