switching transistor A Power microelectronics AP40P04D P Channel MOSFET with trench technology design

Key Attributes
Model Number: AP40P04D
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
40A
Operating Temperature -:
-55℃~+150℃
RDS(on):
18mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF@20V
Number:
1 P-Channel
Input Capacitance(Ciss):
2.76nF@20V
Pd - Power Dissipation:
25W
Gate Charge(Qg):
25nC@4.5V
Mfr. Part #:
AP40P04D
Package:
TO-252-3L
Product Description

Product Overview

The AP40P04D is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This MOSFET is well-suited for battery protection and other switching applications.

Product Attributes

  • Brand: APM Microelectronics
  • Product ID: AP40P04D
  • Technology: Advanced Trench Technology
  • Mode: P-Channel Enhancement Mode
  • Origin: (Yongyuan Microelectronics Technology Co., Ltd.)

Technical Specifications

Parameter Conditions Min. Typ. Max. Units
General Features
VDS (Drain-Source Voltage) -40 V
ID (Continuous Drain Current) VGS @ -10V, TC=25 -40 A
ID (Continuous Drain Current) VGS @ -10V, TC=100 -23 A
RDS(ON) (Static Drain-Source On-Resistance) VGS=-10V, ID=-30A 15 18 m
RDS(ON) (Static Drain-Source On-Resistance) VGS=-4.5V, ID=-20A 18 25 m
VGS(th) (Gate Threshold Voltage) VGS=VDS, ID=-250uA -1.0 -1.6 -2.5 V
Absolute Maximum Ratings (TC=25 unless otherwise noted)
VDS (Drain-Source Voltage) -40 V
VGS (Gate-Source Voltage) 20 V
IDM (Pulsed Drain Current) -120 A
EAS (Single Pulse Avalanche Energy) 125 mJ
PD (Total Power Dissipation) TC=25 25 W
PD (Total Power Dissipation) TA=25 16 W
TSTG (Storage Temperature Range) -55 150
TJ (Operating Junction Temperature Range) -55 150
RJA (Thermal Resistance Junction-Ambient) 62 /W
RJC (Thermal Resistance Junction-Case) 5 /W
Electrical Characteristics (TJ=25, unless otherwise noted)
BVDSS (Drain-Source Breakdown Voltage) VGS=0V , ID=-250uA -40 -44 V
BVDSS/TJ (BVDSS Temperature Coefficient) Reference to 25 , ID=-1mA -0.023 V/
IDSS (Drain-Source Leakage Current) VDS=-40V , VGS=0V , TJ=25 1 uA
IDSS (Drain-Source Leakage Current) VDS=-40V , VGS=0V , TJ=55 5 uA
IGSS (Gate-Source Leakage Current) VGS=20V , VDS=0V 100 nA
Qg (Total Gate Charge) VDS=-20V , VGS=-4.5V , ID=-12A 25 nC
Qgs (Gate-Source Charge) 11 nC
Qgd (Gate-Drain Charge) 9.5 nC
Td(on) (Turn-On Delay Time) VDD =-15V, RL=15 ID =-1A, VGEN =-10V, RG =6 48 ns
Tr (Rise Time) 24 ns
Td(off) (Turn-Off Delay Time) 88 ns
Tf (Fall Time) 9.6 ns
Ciss (Input Capacitance) VDS=-20V , VGS=0V , f=1MHz 2760 pF
Coss (Output Capacitance) 260 pF
Crss (Reverse Transfer Capacitance) 85 pF
IS (Continuous Source Current) VG=VD=0V , Force Current -40 A
ISM (Pulsed Source Current) -90 A
VSD (Diode Forward Voltage) VGS=0V , IS=-1A , TJ=25 -1.3 V
Package Marking and Ordering Information
Product ID Pack Marking Qty(PCS)
AP40P04D TO-252-3L AP40P04D XXX YYYY 2500
Package Mechanical Data: TO-252-3L Dimensions (mm)
A 2.10 0.083
A2 0.66 0.026
B 0.40 0.016
C 2.50 0.098
D 0.10 0.004
E 0.86 0.034
G 0.60 0.024
H 6.40 9.50 10.70 0.252 0.374 0.421
L 5.90 6.30 0.232 0.248
V1 4.47 4.67 0.176 0.184
V2 1.09 1.21 0.043 0.048
L2 0 6 7
B2 5.18 5.48 0.202 0.216
C2 0.44 0.58 0.017 0.023
D1 5.30 (REF) 0.209 (REF)
E1 4.63 0.182

Applications

  • Battery protection
  • Load switch
  • Uninterruptible power supply

2410121632_A-Power-microelectronics-AP40P04D_C3011453.pdf

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