switching transistor A Power microelectronics AP40P04D P Channel MOSFET with trench technology design
Product Overview
The AP40P04D is a P-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON) and low gate charge, with the capability to operate with gate voltages as low as 4.5V. This MOSFET is well-suited for battery protection and other switching applications.
Product Attributes
- Brand: APM Microelectronics
- Product ID: AP40P04D
- Technology: Advanced Trench Technology
- Mode: P-Channel Enhancement Mode
- Origin: (Yongyuan Microelectronics Technology Co., Ltd.)
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Units | |
|---|---|---|---|---|---|---|
| General Features | ||||||
| VDS (Drain-Source Voltage) | -40 | V | ||||
| ID (Continuous Drain Current) | VGS @ -10V, TC=25 | -40 | A | |||
| ID (Continuous Drain Current) | VGS @ -10V, TC=100 | -23 | A | |||
| RDS(ON) (Static Drain-Source On-Resistance) | VGS=-10V, ID=-30A | 15 | 18 | m | ||
| RDS(ON) (Static Drain-Source On-Resistance) | VGS=-4.5V, ID=-20A | 18 | 25 | m | ||
| VGS(th) (Gate Threshold Voltage) | VGS=VDS, ID=-250uA | -1.0 | -1.6 | -2.5 | V | |
| Absolute Maximum Ratings | (TC=25 unless otherwise noted) | |||||
| VDS (Drain-Source Voltage) | -40 | V | ||||
| VGS (Gate-Source Voltage) | 20 | V | ||||
| IDM (Pulsed Drain Current) | -120 | A | ||||
| EAS (Single Pulse Avalanche Energy) | 125 | mJ | ||||
| PD (Total Power Dissipation) | TC=25 | 25 | W | |||
| PD (Total Power Dissipation) | TA=25 | 16 | W | |||
| TSTG (Storage Temperature Range) | -55 | 150 | ||||
| TJ (Operating Junction Temperature Range) | -55 | 150 | ||||
| RJA (Thermal Resistance Junction-Ambient) | 62 | /W | ||||
| RJC (Thermal Resistance Junction-Case) | 5 | /W | ||||
| Electrical Characteristics | (TJ=25, unless otherwise noted) | |||||
| BVDSS (Drain-Source Breakdown Voltage) | VGS=0V , ID=-250uA | -40 | -44 | V | ||
| BVDSS/TJ (BVDSS Temperature Coefficient) | Reference to 25 , ID=-1mA | -0.023 | V/ | |||
| IDSS (Drain-Source Leakage Current) | VDS=-40V , VGS=0V , TJ=25 | 1 | uA | |||
| IDSS (Drain-Source Leakage Current) | VDS=-40V , VGS=0V , TJ=55 | 5 | uA | |||
| IGSS (Gate-Source Leakage Current) | VGS=20V , VDS=0V | 100 | nA | |||
| Qg (Total Gate Charge) | VDS=-20V , VGS=-4.5V , ID=-12A | 25 | nC | |||
| Qgs (Gate-Source Charge) | 11 | nC | ||||
| Qgd (Gate-Drain Charge) | 9.5 | nC | ||||
| Td(on) (Turn-On Delay Time) | VDD =-15V, RL=15 ID =-1A, VGEN =-10V, RG =6 | 48 | ns | |||
| Tr (Rise Time) | 24 | ns | ||||
| Td(off) (Turn-Off Delay Time) | 88 | ns | ||||
| Tf (Fall Time) | 9.6 | ns | ||||
| Ciss (Input Capacitance) | VDS=-20V , VGS=0V , f=1MHz | 2760 | pF | |||
| Coss (Output Capacitance) | 260 | pF | ||||
| Crss (Reverse Transfer Capacitance) | 85 | pF | ||||
| IS (Continuous Source Current) | VG=VD=0V , Force Current | -40 | A | |||
| ISM (Pulsed Source Current) | -90 | A | ||||
| VSD (Diode Forward Voltage) | VGS=0V , IS=-1A , TJ=25 | -1.3 | V | |||
| Package Marking and Ordering Information | ||||||
| Product ID | Pack | Marking | Qty(PCS) | |||
| AP40P04D | TO-252-3L | AP40P04D XXX YYYY | 2500 | |||
| Package Mechanical Data: TO-252-3L | Dimensions (mm) | |||||
| A | 2.10 | 0.083 | ||||
| A2 | 0.66 | 0.026 | ||||
| B | 0.40 | 0.016 | ||||
| C | 2.50 | 0.098 | ||||
| D | 0.10 | 0.004 | ||||
| E | 0.86 | 0.034 | ||||
| G | 0.60 | 0.024 | ||||
| H | 6.40 | 9.50 | 10.70 | 0.252 | 0.374 | 0.421 |
| L | 5.90 | 6.30 | 0.232 | 0.248 | ||
| V1 | 4.47 | 4.67 | 0.176 | 0.184 | ||
| V2 | 1.09 | 1.21 | 0.043 | 0.048 | ||
| L2 | 0 | 6 | 7 | |||
| B2 | 5.18 | 5.48 | 0.202 | 0.216 | ||
| C2 | 0.44 | 0.58 | 0.017 | 0.023 | ||
| D1 | 5.30 (REF) | 0.209 (REF) | ||||
| E1 | 4.63 | 0.182 |
Applications
- Battery protection
- Load switch
- Uninterruptible power supply
2410121632_A-Power-microelectronics-AP40P04D_C3011453.pdf
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