switching device A Power microelectronics AP10N04S 40V N Channel Enhancement Mode MOSFET for industrial
Key Attributes
Model Number:
AP10N04S
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
17mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
76pF@32V
Number:
1 N-channel
Input Capacitance(Ciss):
1.013nF@32V
Pd - Power Dissipation:
1.9W
Gate Charge(Qg):
9.8nC@4.5V
Mfr. Part #:
AP10N04S
Package:
SOP-8
Product Description
Product Overview
The AP10N04S is a 40V N-Channel Enhancement Mode MOSFET utilizing advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 4.5V. This device is well-suited for battery protection and other switching applications.Product Attributes
- Brand: APM Microelectronics
- Product ID: AP10N04S
- Technology: Advanced Trench Technology
- Mode: N-Channel Enhancement Mode
- Origin: (Taiwan Yongyuan Microelectronics Technology Co., Ltd.)
- Package: SOP-8
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TC=25 unless otherwise specified) | ||||||
| VDS | Drain-Source Voltage | 40 | V | |||
| VGS | Gate-Source Voltage | 20 | V | |||
| ID@TA=25 | Continuous Drain Current | 10 | A | |||
| ID@TA=70 | Continuous Drain Current | 6.7 | A | |||
| IDM | Pulsed Drain Current | 50 | A | |||
| EAS | Single Pulse Avalanche Energy | 31 | mJ | |||
| IAS | Avalanche Current | 25 | A | |||
| PD@TA=25 | Total Power Dissipation | 1.9 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | |||
| RJA | Thermal Resistance Junction-ambient | (t10s) | 40 | /W | ||
| RJA | Thermal Resistance Junction-ambient | 65 | /W | |||
| Electrical Characteristics (TC=25 unless otherwise noted) | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 40 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25 , ID=1mA | --- | 0.032 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=7A | --- | 14.5 | 17 | m |
| VGS=4.5V , ID=6A | --- | 18 | 22 | V | ||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1.0 | --- | 2.5 | V |
| VGS(th) | VGS(th) Temperature Coefficient | --- | -4.8 | --- | mV/ | |
| IDSS | Drain-Source Leakage Current | VDS=32V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| VDS=32V , VGS=0V , TJ=55 | --- | --- | 5 | uA | ||
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| gfs | Forward Transconductance | VDS=5V , ID=7A | --- | 32 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 2.1 | --- | |
| Qg | Total Gate Charge | VDS=32V , VGS=4.5V , ID=7A | --- | 9.8 | --- | nC |
| (4.5V) | ||||||
| Qgs | Gate-Source Charge | --- | 2.8 | --- | nC | |
| Qgd | Gate-Drain Charge | --- | 3.9 | --- | nC | |
| Switching Time | Td(on) Turn-On Delay Time | VDD=20V , VGS=10V , RG=3.3 ID=7A | --- | 2.8 | --- | ns |
| Tr Rise Time | --- | 40.4 | --- | ns | ||
| Td(off) Turn-Off Delay Time | --- | 22.8 | --- | ns | ||
| Tf Fall Time | --- | 6.4 | --- | ns | ||
| Capacitance | Ciss Input Capacitance | VDS=15V , VGS=0V , f=1MHz | --- | 1013 | --- | pF |
| Coss Output Capacitance | --- | 107 | --- | pF | ||
| Crss Reverse Transfer Capacitance | --- | 76 | --- | pF | ||
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | --- | 8.4 | A |
| ISM | Pulsed Source Current | VGS=0V , IS=1A , TJ=25 | --- | --- | 50 | A |
| VSD | Diode Forward Voltage | --- | --- | 1 | V | |
| Diode Recovery | trr Reverse Recovery Time | IF=7A , dI/dt=100A/s , TJ=25 | --- | 10 | --- | nS |
| Qrr Reverse Recovery Charge | --- | 3.3 | --- | nC | ||
Applications
- Battery protection
- Load switch
- Uninterruptible power supply
- Other Switching applications
2410121643_A-Power-microelectronics-AP10N04S_C3011296.pdf
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