SOT 23 Plastic Encapsulated ALJ 2N7002K N Channel MOSFET with High Saturation Current Capability
Key Attributes
Model Number:
2N7002K
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
40pF
Output Capacitance(Coss):
30pF
Mfr. Part #:
2N7002K
Package:
SOT-23
Product Description
Product Overview
The 2N7002K is an N-Channel MOSFET from Shenzhen Long Jing Micro-Electronics Co., Ltd., designed with a high-density cell structure for low RDS (ON) and serves as a voltage-controlled small signal switch. It is rugged, reliable, and offers high saturation current capability. This MOSFET is ESD protected up to 2KV and is suitable for various applications requiring efficient switching and low on-resistance. The device is encapsulated in a SOT-23 plastic package.
Product Attributes
- Brand: SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD.
- Model Series: 2N7002K
- Package Type: SOT-23 Plastic-Encapsulate
- Channel Type: N-Channel
- Marking: 702
- Origin: Shenzhen, China (implied by company name and website)
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta=25C unless otherwise specified) | ||||||
| VDS | Drain-Source voltage | 60 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Drain Current | 340 | mA | |||
| PD | Power Dissipation | 350 | mW | |||
| RJA | Thermal Resistance from Junction to Ambient | 357 | °C/W | |||
| TJ | Junction Temperature | 150 | °C | |||
| TSTG | Storage Temperature | -55 | +150 | °C | ||
| Electrical Characteristics (Ta=25°C unless otherwise specified) | ||||||
| Static Characteristics | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250µA | 60 | V | ||
| VGS(th) | Gate-Threshold Voltage* | VDS = VGS, ID = 250µA | 1 | 1.3 | 2.5 | V |
| lGSS | Gate Source leakage current | VDS = 0V, VGS = ±20V | ±10 | µA | ||
| VDS = 0V, VGS = ±10V | ±200 | nA | ||||
| VDS = 0V, VGS = ±5V | ±100 | nA | ||||
| IDSS | Zero Gate Voltage Drain Current | VDS = 48V, VGS = 0V | 1 | µA | ||
| RDS(on) | Drain-Source On-Resistance* | VGS = 4.5V, ID = 200mA | 2.1 | 5.3 | Ω | |
| VGS =10V, ID = 500mA | 1.7 | 5 | Ω | |||
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 300mA | 1.5 | V | ||
| Qr | Recovered charge | VGS = 0V, IS = 300mA, VR = 25V, dls/dt = -100A/µS | 30 | nC | ||
| Dynamic Characteristics** | ||||||
| Ciss | Input Capacitance* | VGS = 0V VDS = 10V f = 1.0MHz | 40 | pF | ||
| Coss | Output Capacitance* | 30 | pF | |||
| Crss | Reverse Transfer Capacitance* | 10 | pF | |||
| Switching Characteristics** | ||||||
| td(on) | Turn-On Time | VGS=10V, VDD=50V, RG=50Ω, RGS=50Ω, RL=250Ω | 10 | ns | ||
| td(off) | Turn-Off Time | 15 | ns | |||
| trr | Reverse recovery Time | VGS=0V, IS=300mA, VR=25V, dls/dt=-100µA/µS | 30 | ns | ||
| BVGSO | Gate-Source Breakdown Voltage | Igs = ±1mA (Open Drain) | ±21.5 | ±30 | V | |
Notes:
*Pulse Test: Pulse Width ≤300µs, Duty Cycle ≤2%.
**These parameters have no way to verify.
2410121707_ALJ-2N7002K_C22400337.pdf
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