N Channel MOSFET ALJ AO3402 with Low On Resistance and 4A Continuous Drain Current in SOT 23 Package
Key Attributes
Model Number:
AO3402
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4A
RDS(on):
105mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.6V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
41pF
Input Capacitance(Ciss):
390pF
Output Capacitance(Coss):
54.5pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
4.34nC@4.5V
Mfr. Part #:
AO3402
Package:
SOT-23
Product Description
Product Overview
The AO3402 is an N-Channel MOSFET utilizing advanced trench technology, designed for excellent RDS(on) and low gate charge. It operates efficiently with gate voltages as low as 2.5V, making it suitable for load switch and PWM applications. Key features include low on-resistance at various voltage and current levels, a drain-source voltage of 30V, and a continuous drain current of 4A.
Product Attributes
- Brand: SHENZHEN LONG JING MICRO-ELECTRONICS CO., LTD.
- Product Type: SOT-23 Plastic-Encapsulate MOSFETS
- Model: AO3402
- Channel Type: N-Channel
- Encapsulation: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Features | ||||||
| RDS(on) | VGS=10V, ID=4.0A | 70 | m | |||
| RDS(on) | VGS=4.5V, ID=2.3A | 75 | m | |||
| RDS(on) | VGS=2.5V, ID=1.5A | 105 | m | |||
| VDS | 30 | V | ||||
| ID | 4.0 | A | ||||
| Applications | ||||||
| Load Switch and in PWM applications | ||||||
| Maximum Ratings (Ta=25C unless otherwise specified) | ||||||
| Drain-Source voltage | VDS | 30 | V | |||
| Gate-Source voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | 4 | A | |||
| Drain Current-Pulsed | IDM | 1) | 15 | A | ||
| Power Dissipation | PD | 1.4 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Storage Temperature | TSTG | -55 | +150 | C | ||
| Thermal Characteristics (Ta=25C unless otherwise specified) | ||||||
| Maximum junction-ambient(t<10s) | RJA | 70 | 90 | C/W | ||
| Maximum junction-ambient | RJA | 100 | 125 | C/W | ||
| Maximum junction-Lead | RJL | 63 | 80 | C/W | ||
| Electrical Characteristics (TJ=25C unless otherwise specified) | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250A | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 24V, VGS = 0V | 1 | A | ||
| Gate-body Leakage current | lGSS | VDS = 0V, VGS = 12V | 100 | nA | ||
| On characteristics 3) | ||||||
| Drain-Source On-Resistance | RDS(on) | VGS = 10V, ID = 4A | 70 | m | ||
| Drain-Source On-Resistance | RDS(on) | VGS = 4.5V, ID = 2.3A | 75 | m | ||
| Drain-Source On-Resistance | RDS(on) | VGS = 2.5V, ID = 1.5A | 105 | m | ||
| Forward Trans conductance | gfs | VDS = 5V, ID = 4A | 8 | S | ||
| Gate-Threshold Voltage | VGS(th) | VDS = VGS, ID = 250A | 0.8 | 1.6 | V | |
| Dynamic Characteristics 4) | ||||||
| Input Capacitance | Ciss | VGS = 0V, VDS = 15V, f = 1MHz | 390 | pF | ||
| Output Capacitance | Coss | 54.5 | pF | |||
| Reverse Transfer Capacitance | Crss | 41 | pF | |||
| Gate resistance | Rg | VDS =0V, VGS = 0V, f = 1MHz | 3 | |||
| Switching Characteristics 4) | ||||||
| Turn-On Delay Time | td(on) | VGS = 10V, VDS = 15V, RL = 3.75, RGEN = 6 | 3.3 | ns | ||
| Rise Time | tr | 1 | ns | |||
| Turn-Off Delay Time | td(off) | 21.7 | ns | |||
| Fall Time | tf | 2.1 | ns | |||
| Total gate charge | Qg | VDS = 15V, VGS = 4.5V, ID = 4A | 4.34 | nC | ||
| Gate-source Charge | Qgs | 0.6 | nC | |||
| Gate-drain Charge | Qgd | 1.38 | nC | |||
| Body diode reverse recovery time | trr | IF = 4A, dI/dt = 100A/s | 12 | nS | ||
| Body diode reverse recovery charge | Qrr | 6.3 | nC | |||
| Diode forward voltage | VSD | VGS = 0V, ID = 1A | 0.8 | 1.2 | V | |
2410121929_ALJ-AO3402_C22400341.pdf
Related Products
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
